ADESTO TECHNOLOGY CORPORATION

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
G11C STATIC STORES 7982
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 42320
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 9438
 
  
 
H03K PULSE TECHNIQUE 2129
 
  
 
B05D PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 186
 
  
 
C30B SINGLE-CRYSTAL GROWTH 155
 
  
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 1158
 
  
 
H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE 165
 
  
 
H03M CODING, DECODING OR CODE CONVERSION, IN GENERAL 1110

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0308,306 MEMORY DEVICE HAVING MULTIPLE READ BUFFERS FOR READ LATENCY REDUCTIONMar 21, 17Oct 26, 17[G06F]
2017/0236,561 MEMORY DEVICE ULTRA-DEEP POWER-DOWN MODE EXIT CONTROLJan 18, 17Aug 17, 17[G11C]
2015/0293,864 SERIAL MEMORY DEVICE ALERT OF AN EXTERNAL HOST TO COMPLETION OF AN INTERNALLY SELF-TIMED OPERATIONOct 16, 14Oct 15, 15[G06F]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9922684 Memory device ultra-deep power-down mode exit controlJan 18, 17Mar 20, 18[G11C]
9852090 Serial memory device alert of an external host to completion of an internally self-timed operationOct 16, 14Dec 26, 17[G06F, G11C]
9818939 Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereofJan 07, 16Nov 14, 17[H01L]
9812183 Read latency reduction in a memory deviceMar 04, 16Nov 07, 17[G11C]
9812200 Concurrent read and write operations in a serial flash deviceMay 22, 15Nov 07, 17[G06F, G11C]
9755142 Methods of making memory devices with programmable impedance elements and vertically formed access devicesMay 16, 16Sep 05, 17[H01L, G11C]
9734902 Resistive memory device with ramp-up/ramp-down program/erase pulseSep 22, 15Aug 15, 17[G11C]
9729138 Circuits and systems having low power power-on-reset and/or brown out detectionMar 30, 16Aug 08, 17[H03K, G06F]
9721658 Memory devices and methods for storing single data value in multiple programmable resistance elementsJul 04, 15Aug 01, 17[G11C]
9711719 Nonvolatile memory elements having conductive structures with semimetals and/or semiconductorsMar 17, 14Jul 18, 17[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2016/0043,310 PROGRAMMABLE RESISTANCE MEMORY ELEMENTS WITH ELECTRODE INTERFACE LAYER AND MEMORY DEVICES INCLUDING THE SAMEAbandonedJul 04, 15Feb 11, 16[H01L]
2014/0293,676 PROGRAMMABLE IMPEDANCE MEMORY ELEMENTS AND CORRESPONDING METHODSAbandonedMar 03, 14Oct 02, 14[H01L, G11C]
2014/0089,560 MEMORY DEVICES AND METHODS HAVING WRITE DATA PERMUTATION FOR CELL WEAR REDUCTIONAbandonedSep 25, 12Mar 27, 14[G06F]
8659931 Erase and soft program within the erase operation for a high speed resistive switching memory operation with controlled erased statesExpiredJun 04, 12Feb 25, 14[G11C]
8624219 Variable impedance memory element structures, methods of manufacture, and memory devices containing the sameExpiredApr 12, 12Jan 07, 14[H01L]
8531867 Conductive filament based memory elements and methods with improved data retention and/or enduranceExpiredMay 04, 12Sep 10, 13[H01L, G11C]
7772614 Solid electrolyte memory element and method for fabricating such a memory elementExpiredMar 16, 06Aug 10, 10[H01L]
7658773 Method for fabricating a solid electrolyte memory device and solid electrolyte memory deviceExpiredSep 29, 06Feb 09, 10[H01L, H01G]
7655939 Memory cell, memory device and method for the production thereofExpiredApr 07, 06Feb 02, 10[H01L]
7538411 Integrated circuit including resistivity changing memory cellsExpiredApr 26, 06May 26, 09[H01L]
7515454 CBRAM cell and CBRAM array, and method of operating thereofExpiredAug 02, 06Apr 07, 09[H01L, G11C]
7514706 Voltage reference circuit using programmable metallization cellsExpiredOct 16, 06Apr 07, 09[G11C]
7511294 Resistive memory element with shortened erase timeExpiredFeb 03, 06Mar 31, 09[H01L]
7483293 Method for improving the thermal characteristics of semiconductor memory cellsExpiredOct 28, 05Jan 27, 09[G11C]
2008/0278,988 RESISTIVE SWITCHING ELEMENTAbandonedMay 09, 07Nov 13, 08[H01C, G11C]
7442605 Resistively switching memoryExpiredApr 25, 05Oct 28, 08[H01L]
7214587 Method for fabricating a semiconductor memory cellExpiredMar 09, 05May 08, 07[H01L]
7215564 Semiconductor memory component in cross-point architectureExpiredApr 27, 05May 08, 07[G11C]
6946882 Current sense amplifierExpiredDec 20, 02Sep 20, 05[G01R]

Top Inventors for This Owner

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