ALPHA & OMEGA SEMICONDUCTOR, LTD.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 145222
 
 
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 770
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 595
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 3156
 
 
 
G11C STATIC STORES 3148
 
 
 
H03K PULSE TECHNIQUE 3128
 
 
 
H01F MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES 282
 
 
 
H03B GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS 261
 
 
 
H04B TRANSMISSION 2208
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 1446

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9236450 Fabrication of MOS device with schottky barrier controlling layerJun 10, 14Jan 12, 16[H01L]
9214544 Source and body contact structure for trench-DMOS devices using polysiliconApr 18, 14Dec 15, 15[H01L]
8981464 Wafer level chip scale package and process of manufactureMay 06, 14Mar 17, 15[H01L]
8946942 Robust semiconductor power devices with design to protect transistor cells with slower switching speedMar 03, 08Feb 03, 15[H03K, H01L, H01H]
8928079 MOS device with low injection diodeSep 11, 12Jan 06, 15[H01L]
8884406 Etch depth determination structureSep 13, 11Nov 11, 14[H01L]
8878292 Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and methodMar 02, 08Nov 04, 14[H01L]
8853772 High-mobility trench MOSFETsJul 22, 11Oct 07, 14[H01L]
8809143 Fabrication of MOS device with schottky barrier controlling layerDec 21, 12Aug 19, 14[H01L]
8728890 Fabrication of MOS device with integrated Schottky diode in active region contact trenchApr 25, 13May 20, 14[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2012/0267,787 Wafer Level Chip Scale Package Method Using Clip ArrayAbandonedJul 04, 12Oct 25, 12[H01L]
2012/0167,384 Method of Making a Low Profile Flip Chip Power ModuleAbandonedMar 12, 12Jul 05, 12[H05K]
2010/0015,770 Double gate manufactured with locos techniquesAbandonedSep 18, 09Jan 21, 10[H01L]
2009/0242,973 SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICONAbandonedMar 31, 08Oct 01, 09[H01L]
2009/0166,722 High voltage structures and methods for vertical power devices with improved manufacturabilityAbandonedDec 28, 07Jul 02, 09[H01L]
7541666 Semiconductor package having dimpled plate interconnectionsWithdrawnApr 30, 07Jun 02, 09[H01L]
2009/0115,018 Transient voltage suppressor manufactured in silicon on oxide (SOI) layerAbandonedNov 01, 07May 07, 09[H01L]
2009/0057,869 CO-PACKAGED HIGH-SIDE AND LOW-SIDE NMOSFETS FOR EFFICIENT DC-DC POWER CONVERSIONAbandonedAug 31, 07Mar 05, 09[H01L]
2009/0039,456 Structures and methods for forming Schottky diodes on a P-substrate or a bottom anode Schottky diodeAbandonedAug 08, 07Feb 12, 09[H01L]
2008/0296,673 Double gate manufactured with locos techniquesAbandonedMay 29, 07Dec 04, 08[H01L]
2008/0242,052 Method of forming ultra thin chips of power devicesAbandonedMar 30, 07Oct 02, 08[H01L]
2008/0150,013 Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layerAbandonedDec 22, 06Jun 26, 08[H01L]
2007/0075,360 Cobalt silicon contact barrier metal process for high density semiconductor power devicesAbandonedSep 30, 05Apr 05, 07[H01L]
2006/0273,379 MOSFET using gate work function engineering for switching applicationsAbandonedJun 06, 05Dec 07, 06[H01L]
2006/0145,312 Dual flat non-leaded semiconductor packageAbandonedJan 05, 05Jul 06, 06[H01L]
2006/0145,319 Flip chip contact (FCC) power packageAbandonedDec 31, 04Jul 06, 06[H01L]
2006/0108,635 Trenched MOSFETS with part of the device formed on a (110) crystal planeAbandonedNov 23, 04May 25, 06[H01L]
2005/0280,133 Multiple device packageAbandonedJun 21, 04Dec 22, 05[H01L]

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