ALPHA & OMEGA SEMICONDUCTOR, LTD.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 145217
 
 
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 774
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 592
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 3156
 
 
 
G11C STATIC STORES 3155
 
 
 
H03K PULSE TECHNIQUE 3126
 
 
 
H01F MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES 283
 
 
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 2103
 
 
 
H03B GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS 258
 
 
 
H04B TRANSMISSION 2200

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2014/0218,990 POWER FACTOR CORRECTION DEVICE AND CORRECTING METHOD THEREOFApr 09, 14Aug 07, 14[H02M]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9236450 Fabrication of MOS device with schottky barrier controlling layerJun 10, 14Jan 12, 16[H01L]
9214544 Source and body contact structure for trench-DMOS devices using polysiliconApr 18, 14Dec 15, 15[H01L]
8981464 Wafer level chip scale package and process of manufactureMay 06, 14Mar 17, 15[H01L]
8946942 Robust semiconductor power devices with design to protect transistor cells with slower switching speedMar 03, 08Feb 03, 15[H01H, H01L, H03K]
8928079 MOS device with low injection diodeSep 11, 12Jan 06, 15[H01L]
8884406 Etch depth determination structureSep 13, 11Nov 11, 14[H01L]
8878292 Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and methodMar 02, 08Nov 04, 14[H01L]
8853772 High-mobility trench MOSFETsJul 22, 11Oct 07, 14[H01L]
8809143 Fabrication of MOS device with schottky barrier controlling layerDec 21, 12Aug 19, 14[H01L]
8728890 Fabrication of MOS device with integrated Schottky diode in active region contact trenchApr 25, 13May 20, 14[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2016/0079,874 CONSTANT ON-TIME (COT) CONTROL IN ISOLATED CONVERTERABANDec 07, 14Mar 17, 16[H02M]
2012/0267,787 Wafer Level Chip Scale Package Method Using Clip ArrayABANJul 04, 12Oct 25, 12[H01L]
2012/0167,384 Method of Making a Low Profile Flip Chip Power ModuleABANMar 12, 12Jul 05, 12[H05K]
2010/0015,770 Double gate manufactured with locos techniquesABANSep 18, 09Jan 21, 10[H01L]
2009/0242,973 SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICONABANMar 31, 08Oct 01, 09[H01L]
2009/0166,722 High voltage structures and methods for vertical power devices with improved manufacturabilityABANDec 28, 07Jul 02, 09[H01L]
7541666 Semiconductor package having dimpled plate interconnectionsWithdrawnApr 30, 07Jun 02, 09[H01L]
2009/0115,018 Transient voltage suppressor manufactured in silicon on oxide (SOI) layerABANNov 01, 07May 07, 09[H01L]
2009/0057,869 CO-PACKAGED HIGH-SIDE AND LOW-SIDE NMOSFETS FOR EFFICIENT DC-DC POWER CONVERSIONABANAug 31, 07Mar 05, 09[H01L]
2009/0039,456 Structures and methods for forming Schottky diodes on a P-substrate or a bottom anode Schottky diodeABANAug 08, 07Feb 12, 09[H01L]
2008/0296,673 Double gate manufactured with locos techniquesABANMay 29, 07Dec 04, 08[H01L]
2008/0242,052 Method of forming ultra thin chips of power devicesABANMar 30, 07Oct 02, 08[H01L]
2008/0150,013 Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layerABANDec 22, 06Jun 26, 08[H01L]
2007/0075,360 Cobalt silicon contact barrier metal process for high density semiconductor power devicesABANSep 30, 05Apr 05, 07[H01L]
2006/0273,379 MOSFET using gate work function engineering for switching applicationsABANJun 06, 05Dec 07, 06[H01L]
2006/0145,312 Dual flat non-leaded semiconductor packageABANJan 05, 05Jul 06, 06[H01L]
2006/0145,319 Flip chip contact (FCC) power packageABANDec 31, 04Jul 06, 06[H01L]
2006/0108,635 Trenched MOSFETS with part of the device formed on a (110) crystal planeABANNov 23, 04May 25, 06[H01L]
2005/0280,133 Multiple device packageABANJun 21, 04Dec 22, 05[H01L]

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