AMMONO SP. Z O.O.

Patent Owner

Watch Compare Add to Portfolio

Stats

Details

Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
C30B SINGLE-CRYSTAL GROWTH 1640
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 5357

Top Patents (by citation)

Upgrade to the Professional Level to View Top Patents for this Owner. Learn More

Recent Publications

  • No Recent Publications to Display

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8754449 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereofJun 10, 05Jun 17, 14[H01L]
8110848 Substrate for epitaxy and method of preparing the sameJun 16, 08Feb 07, 12[C30B]
7935550 Method of forming light-emitting device using nitride bulk single crystal layerJan 04, 08May 03, 11[H01L, C30B]
7905957 Method of obtaining bulk single crystals by seeded growthNov 28, 05Mar 15, 11[C30B]
7811380 Process for obtaining bulk mono-crystalline gallium-containing nitrideDec 11, 03Oct 12, 10[C30B]
7750355 Light emitting element structure using nitride bulk single crystal layerOct 28, 02Jul 06, 10[H01L]
7744697 Bulk monocrystalline gallium nitrideOct 14, 03Jun 29, 10[C30B]
7589358 Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the sameDec 13, 02Sep 15, 09[H01L, C30B]
7422633 Method of forming gallium-containing nitride bulk single crystal on heterogeneous substrateJun 06, 02Sep 09, 08[C30B]
7420261 Bulk nitride mono-crystal including substrate for epitaxyOct 30, 06Sep 02, 08[H01L]

View all patents..

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2010/0327,292 METHOD OF OBTAINING BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, BULK MONO-CRYSTALLINE GALLIUM-CONTAINING NITRIDE, SUBSTRATES MANUFACTURED THEREOF AND DEVICES MANUFACTURED ON SUCH SUBSTRATESAbandonedJun 24, 10Dec 30, 10[H01L]
2008/0050,855 Nitride semiconductor laser device and a method for improving its performanceAbandonedOct 22, 07Feb 28, 08[H01S]
7315559 Nitride semiconductor laser device and a method for improving its performanceExpiredJun 26, 03Jan 01, 08[H01S]
2006/0138,431 Light emitting device structure having nitride bulk single crystal layerAbandonedDec 11, 02Jun 29, 06[H01L]
7057211 Nitride semiconductor laser device and manufacturing method thereofExpiredOct 28, 02Jun 06, 06[H01L]

Top Inventors for This Owner

Upgrade to the Professional Level to View Top Inventors for this Owner. Learn More

We are sorry but your current selection exceeds the maximum number of comparisons () for this membership level. Upgrade to our Level for up to -1 comparisons!

We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level. Upgrade to our Level for up to -1 portfolios!.