EMEMORY TECHNOLOGY INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
G11C STATIC STORES 15157
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 86277
 
 
 
H03K PULSE TECHNIQUE 25106
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1387
 
 
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 1389
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 6441
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 674
 
 
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 572
 
 
 
H04L TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION 4281
 
 
 
H02J CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY 2118

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2018/0019,250 UV-ERASABLE MEMORY DEVICE WITH UV TRANSMITTING WINDOW AND FABRICATION METHOD THEREOFJun 22, 17Jan 18, 18[H01L]
2017/0148,801 ANTIFUSE-TYPE ONE TIME PROGRAMMING MEMORY CELL AND ARRAY STRUCTURE WITH SAMEFeb 03, 17May 25, 17[H01L, G11C]
2017/0117,284 ONE-TIME PROGRAMMABLE MEMORY CELL CAPABLE OF REDUCING LEAKAGE CURRENT AND PREVENTING SLOW BIT RESPONSE, AND METHOD FOR PROGRAMMING A MEMORY ARRAY COMPRISING THE SAMEJan 06, 17Apr 27, 17[H01L, G11C]
2016/0104,712 ONE TIME PROGRAMMABLE NON-VOLATILE MEMORYSep 02, 15Apr 14, 16[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9892928 Electrically erasable programmable non-volatile memory cell structureJan 07, 16Feb 13, 18[H01L]
9882566 Driving circuit for non-volatile memoryJun 23, 17Jan 30, 18[H03K, H01L]
9847133 Memory array capable of performing byte erase operationMay 10, 16Dec 19, 17[G11C]
9830991 Non-volatile memoryDec 01, 16Nov 28, 17[G11C]
9824727 Memory apparatus capable of preventing leakage currentSep 08, 16Nov 21, 17[H03K, H01L, G11C]
9812212 Memory cell with low reading voltagesJan 18, 17Nov 07, 17[H01L, G11C]
9805776 Memory device, peripheral circuit thereof and single-byte data write method thereofDec 15, 16Oct 31, 17[G11C]
9805806 Non-volatile memory cell and method of operating the sameSep 25, 16Oct 31, 17[H01L, G11C]
9799410 Method for programming antifuse-type one time programmable memory cellDec 28, 16Oct 24, 17[G11C]
9799662 Antifuse-type one time programming memory cell and array structure with sameJan 13, 16Oct 24, 17[H01L, G11C]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2016/0197,899 Method of Dynamically Encrypting Fingerprint Data and Related Fingerprint SensorAbandonedJan 06, 16Jul 07, 16[H04L]
2016/0148,686 MEMORY CELL ARRAY OF RESISTIVE RANDOM-ACCESS MEMORIESAbandonedOct 07, 15May 26, 16[G11C]
2016/0006,348 CHARGE PUMP APPARATUSAbandonedOct 03, 14Jan 07, 16[H02M]
2016/0006,349 FOUR-PHASE CHARGE PUMP CIRCUITAbandonedOct 22, 14Jan 07, 16[H03K, H02M]
2015/0194,434 MEMORY DEVICE AND METHODS OF FORMING MEMORY DEVICE AND SEMICONDUCTOR DEVICEAbandonedJul 29, 14Jul 09, 15[H01L]
2015/0140,766 Method of forming and structure of a non-volatile memory cellAbandonedJan 26, 15May 21, 15[H01L]
2015/0091,077 Method of fabricating a non-volatile memoryAbandonedJun 30, 14Apr 02, 15[H01L]
2015/0091,080 Method of forming and structure of a non-volatile memory cellAbandonedJul 08, 14Apr 02, 15[H01L]
2015/0048,875 HIGH VOLTAGE POWER CONTROL SYSTEMAbandonedJun 12, 14Feb 19, 15[H03K]
2014/0293,673 NONVOLATILE MEMORY CELL STRUCTURE AND METHOD FOR PROGRAMMING AND READING THE SAMEAbandonedFeb 10, 14Oct 02, 14[H01L, G11C]
2014/0242,763 METHOD FOR FABRICATING NONVOLATILE MEMORY STRUCTUREAbandonedMay 14, 14Aug 28, 14[H01L]
2014/0177,350 SINGLE-ENDED SENSE AMPLIFIER CIRCUITAbandonedDec 23, 12Jun 26, 14[G11C]
2013/0119,453 NON-VOLATILE MEMORY UNIT CELL WITH IMPROVED SENSING MARGIN AND RELIABILITYAbandonedDec 12, 12May 16, 13[H01L]
2013/0119,458 NOR FLASH MEMORY CELL AND STRUCTURE THEREOFAbandonedDec 18, 12May 16, 13[H01L]
2013/0121,079 NOR FLAH MEMORY CELL AND STRUCTURE THEREOFAbandonedNov 14, 11May 16, 13[H01L, G11C]
2013/0064,027 Memory and Method of Adjusting Operating Voltage thereofAbandonedSep 14, 11Mar 14, 13[G11C]
2012/0314,474 NON-VOLATILE MEMORY CELL STRUCTURE AND METHOD FOR PROGRAMMING AND READING THE SAMEAbandonedJun 09, 11Dec 13, 12[H01L, G11C]
2012/0223,381 Non-volatile memory structure and method for manufacturing the sameAbandonedJul 26, 11Sep 06, 12[H01L]
2012/0124,272 FLASH MEMORY APPARATUSAbandonedNov 12, 10May 17, 12[G06F]
2012/0099,361 SEMICONDUCTOR CAPACITOR, ONE TIME PROGRAMMABLE MEMORY CELL AND FABRICATING METHOD AND OPERATING METHOD THEREOFAbandonedDec 28, 11Apr 26, 12[G11C]

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