General Semiconductor, Inc.

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Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 85278
 
  
 
H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE 165
 
  
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 176

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
7745885 High voltage power MOSFET having low on-resistanceJun 27, 06Jun 29, 10[H01L]
7525183 Surface mount multichip devicesJul 10, 07Apr 28, 09[H01L]
7242078 Surface mount multichip devicesJul 18, 05Jul 10, 07[H01L]
7224027 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysiliconSep 20, 04May 29, 07[H01L]
7094640 Method of making a trench MOSFET device with improved on-resistanceDec 01, 03Aug 22, 06[H01L]
7091552 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantationDec 01, 03Aug 15, 06[H01L]
7084455 Power semiconductor device having a voltage sustaining region that includes terraced trench with continuous doped columns formed in an epitaxial layerFeb 02, 04Aug 01, 06[H01L]
7067376 High voltage power MOSFET having low on-resistanceSep 29, 03Jun 27, 06[H01L]
7049194 Trench DMOS device with improved drain contactDec 01, 03May 23, 06[H01L]
6992350 High voltage power MOSFET having low on-resistanceMay 09, 03Jan 31, 06[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
8513732 High voltage power MOSFET having low on-resistanceExpiredJan 30, 06Aug 20, 13[H01L]
7586148 Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenchesExpiredJul 31, 06Sep 08, 09[H01L]
7199427 DMOS device with a programmable threshold voltageExpiredApr 12, 05Apr 03, 07[H01L]
7019360 High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping sourceExpiredFeb 23, 04Mar 28, 06[H01L]
7015125 Trench MOSFET device with polycrystalline silicon source contact structureExpiredNov 08, 04Mar 21, 06[H01L]
2005/0224,925 Lead frame having a tilt flap for locking molding compound and semiconductor device having the sameAbandonedApr 01, 04Oct 13, 05[H01L]
2005/0218,482 Top finger having a groove and semiconductor device having the sameAbandonedApr 01, 04Oct 06, 05[H01L]
6949432 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surfaceExpiredNov 01, 04Sep 27, 05[H01L]
6921938 Double diffused field effect transistor having reduced on-resistanceExpiredMar 29, 04Jul 26, 05[H01L]
6882573 DMOS device with a programmable threshold voltageExpiredAug 13, 02Apr 19, 05[G11C]
6861337 Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizesExpiredMay 10, 02Mar 01, 05[H01L]
6822288 Trench MOSFET device with polycrystalline silicon source contact structureExpiredNov 20, 01Nov 23, 04[H01L]
6812526 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surfaceExpiredMay 13, 02Nov 02, 04[H01L]
6794251 Method of making a power semiconductor deviceExpiredApr 16, 03Sep 21, 04[H01L]
6781196 Trench DMOS transistor having improved trench structureExpiredMar 11, 02Aug 24, 04[H01L]
6750104 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping sourceExpiredDec 31, 01Jun 15, 04[H01L]
6734495 Two terminal programmable MOS-gated current sourceExpiredAug 13, 02May 11, 04[H01L]
2004/0075,160 Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operationAbandonedOct 18, 02Apr 22, 04[H01L]
6724044 MOSFET device having geometry that permits frequent body contactExpiredMay 10, 02Apr 20, 04[H01L]
6713351 Double diffused field effect transistor having reduced on-resistanceExpiredMar 28, 01Mar 30, 04[H01L]

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