INTERMOLECULAR, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 52098
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 8131
 
 
 
G11C STATIC STORES 51103
 
 
 
G01N INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES 36170
 
 
 
B01J CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS 1594
 
 
 
B08B CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL 1543
 
 
 
C40B COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES, IN SILICO LIBRARIES 158
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 15144
 
 
 
B05C APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 1134
 
 
 
C03C CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS1149

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0104,031 Selector ElementsOct 06, 16Apr 13, 17[G11C, H01L]
2017/0084,643 Storage Capacitors for Displays and Methods for Forming the SameSep 14, 16Mar 23, 17[H01L]
2016/0304,815 METHODS AND CHEMICAL SOLUTIONS FOR CLEANING PHOTOMASKS USING QUATERNARY AMMONIUM HYDROXIDESApr 19, 16Oct 20, 16[B08B, G03F, C11D]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9831100 Solution based etching of titanium carbide and titanium nitride structuresJun 24, 14Nov 28, 17[H01L]
9786368 Two stage forming of resistive random access memory cellsNov 24, 14Oct 10, 17[G11C, H01L]
9761800 Method for reducing forming voltage in resistive random access memoryJun 23, 14Sep 12, 17[H01L]
9722049 Methods for forming crystalline IGZO with a seed layerDec 23, 13Aug 01, 17[H01L]
9680092 Current selectors formed using single stack structuresAug 02, 16Jun 13, 17[H01L]
9620205 All around electrode for novel 3D RRAM applicationsDec 18, 13Apr 11, 17[G11C, H01L]
9607904 Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devicesDec 02, 13Mar 28, 17[H01L]
9593414 Hydrogenated amorphous silicon dielectric for superconducting devicesDec 31, 13Mar 14, 17[C23C, H01J, H01L]
9543516 Method for forming a doped metal oxide for use in resistive switching memory elementsJun 27, 14Jan 10, 17[H01L]
9482920 Transparent resistive random access memory cellsOct 02, 14Nov 01, 16[G02F, H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2017/0117,282 DRAM Capacitors and Methods for Forming the SameAbandonedOct 25, 16Apr 27, 17[H01L]
2017/0084,680 Methods for Forming High-K Dielectric Materials with Tunable PropertiesAbandonedSep 14, 16Mar 23, 17[H01L]
2017/0062,522 Combining Materials in Different Components of Selector Elements of Integrated CircuitsAbandonedAug 12, 16Mar 02, 17[G11C, H01L]
2016/0181,087 Particle removal with minimal etching of silicon-germaniumAbandonedDec 19, 14Jun 23, 16[B08B, H01L]
2016/0181,091 Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the SameAbandonedDec 19, 14Jun 23, 16[H01L]
2016/0181,380 Semiconductor Device Metal-Insulator-Semiconductor Contacts with Interface Layers and Methods for Forming the SameAbandonedDec 19, 14Jun 23, 16[H01L]
2016/0181,430 IGZO Devices with Metallic Contacts and Methods for Forming the SameAbandonedDec 18, 14Jun 23, 16[H01L]
2016/0181,615 Solid-State Batteries with Improved Performance and Reduced Manufacturing Costs and Methods for Forming the SameAbandonedDec 19, 14Jun 23, 16[H01M]
2016/0156,062 Solid-State Batteries with Electrodes Infused with Ionically Conductive Material and Methods for Forming the SameAbandonedDec 02, 14Jun 02, 16[H01M]
2016/0148,976 Simultaneous Carbon and Nitrogen Doping of Si in MSM Stack as a Selector Device for Non-Volatile Memory ApplicationAbandonedNov 26, 14May 26, 16[H01L]
2016/0149,129 Using Metal Silicides as Electrodes for MSM Stack in Selector for Non-Volatile Memory ApplicationAbandonedNov 25, 14May 26, 16[H01L]
2016/0141,335 Diamond Like Carbon (DLC) in a Semiconductor Stack as a Selector for Non-Volatile Memory ApplicationAbandonedNov 18, 14May 19, 16[H01L]
2016/0133,691 DRAM MIMCAP Stack with MoO2 ElectrodeAbandonedNov 06, 14May 12, 16[H01L]
2016/0133,819 Fluorine Containing Low Loss Dielectric Layers for Superconducting CircuitsAbandonedDec 29, 15May 12, 16[C23C, H01L]
2016/0133,837 Low-Temperature Deposition of Metal Silicon Nitrides from Silicon Halide PrecursorsAbandonedNov 12, 14May 12, 16[H01L]
2016/0122,235 Low-E Panels and Methods of Forming the SameAbandonedNov 03, 14May 05, 16[C03C]
2016/0118,309 Minimal Contact Wet Processing Systems and MethodsAbandonedOct 28, 14Apr 28, 16[H01L]
2016/0111,302 Systems and Methods for Wet Processing Substrates with Rotating Splash ShieldAbandonedOct 21, 14Apr 21, 16[B08B, H01L, B05B]
2016/0111,603 Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming ThereofAbandonedOct 21, 14Apr 21, 16[H01L]
2016/0099,304 MoNx as a Top Electrode for TiOx Based DRAM ApplicationsAbandonedOct 06, 14Apr 07, 16[H01L]

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