M-MOS SEMICONDUCTOR SDN. BHD.

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
8115252 Elimination of gate oxide weak spot in deep trenchExpiredMay 12, 05Feb 14, 12[H01L]
7687851 High density trench MOSFET with reduced on-resistanceExpiredNov 23, 05Mar 30, 10[H01L]
7592650 High density hybrid MOSFET deviceExpiredSep 11, 05Sep 22, 09[H01L]
2007/0238,251 Method of forming sub-100nm narrow trenches in semiconductor substratesABANApr 05, 06Oct 11, 07[H01L]
2007/0176,239 Trenched MOSFETS with improved ESD protection capabilityABANJan 31, 06Aug 02, 07[H01L]
2007/0004,116 Trenched MOSFET termination with tungsten plug structuresABANJan 12, 06Jan 04, 07[H01L]
2006/0273,380 Source contact and metal scheme for high density trench MOSFETABANJun 06, 05Dec 07, 06[H01L]
2006/0273,382 High density trench MOSFET with low gate resistance and reduced source contact spaceABANAug 15, 05Dec 07, 06[H01L]
2006/0273,384 Structure for avalanche improvement of ultra high density trench MOSFETABANSep 26, 05Dec 07, 06[H01L]
2006/0273,385 Trenched MOSFET device with contact trenches filled with tungsten plugsABANFeb 28, 06Dec 07, 06[H01L]
2006/0273,390 Gate contact and runners for high density trench MOSFETABANJul 14, 05Dec 07, 06[H01L]

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