OVONYX, INC.

Patent Owner

Watch Compare Add to Portfolio

Stats

Details

Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 9353
 
  
 
B05D PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 186
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1100
 
  
 
G11B INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER 1137
 
  
 
G11C STATIC STORES 1150
 
  
 
H03K PULSE TECHNIQUE 1130

Top Patents (by citation)

Upgrade to the Professional Level to View Top Patents for this Owner. Learn More

Recent Publications

  • No Recent Publications to Display

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
5596522 Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsAug 02, 95Jan 21, 97[H01L]
5543737 Logical operation circuit employing two-terminal chalcogenide switchesFeb 10, 95Aug 06, 96[H03K]
5536947 Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefromJul 25, 95Jul 16, 96[H01L]
5534711 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromApr 19, 95Jul 09, 96[H01L]
5534712 Electrically erasable memory elements characterized by reduced current and improved thermal stabilityAug 21, 95Jul 09, 96[H01L]
5414271 Electrically erasable memory elements having improved set resistance stabilityNov 07, 91May 09, 95[H01L]
5406509 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefromApr 12, 93Apr 11, 95[G11C]
5359205 Electrically erasable memory elements characterized by reduced current and improved thermal stabilityMay 08, 92Oct 25, 94[H01L]
5341328 Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle lifeJun 15, 92Aug 23, 94[H01L]
5330630 Switch with improved threshold voltageJan 02, 91Jul 19, 94[C23C, B05D]

View all patents..

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2011/0122,675 Programmable Resistance MemoryAbandonedNov 25, 09May 26, 11[G11C]
2010/0283,029 Programmable resistance memory and method of making sameAbandonedMay 11, 09Nov 11, 10[H01L]
2010/0284,211 Multilevel Nonvolatile Memory via Dual Polarity ProgrammingAbandonedMay 05, 09Nov 11, 10[G11C]
2010/0221,896 Electrical Device with Improved Electrode SurfaceAbandonedMay 17, 10Sep 02, 10[H01L]
2010/0203,263 Deposition of Chalcogenide Materials via Vaporization ProcessAbandonedFeb 12, 09Aug 12, 10[C23C, B05D]
2010/0203,709 DEPOSITION OF CHALCOGENIDE MATERIALS VIA VAPORIZATION PROCESSAbandonedJun 30, 09Aug 12, 10[H01L]
2010/0182,827 High Margin Multilevel Phase-Change Memory via Pulse Width ProgrammingAbandonedJan 22, 09Jul 22, 10[G11C]
2010/0059,729 Apparatus and method for memoryAbandonedSep 09, 08Mar 11, 10[H01L]
2009/0298,222 Method for manufacturing Chalcogenide devicesAbandonedMay 28, 08Dec 03, 09[H01L]
2009/0275,198 Vapor Phase Methods for Forming Electrodes in Phase Change Memory DevicesAbandonedMay 01, 08Nov 05, 09[H01L]
2009/0257,275 Seasoning phase change memoriesAbandonedApr 09, 08Oct 15, 09[G11C]
2009/0226,603 Pressure extrusion method for filling features in the fabrication of electronic devicesAbandonedMar 10, 08Sep 10, 09[B05D]
2009/0166,601 Non-volatile programmable variable resistance elementAbandonedJan 02, 08Jul 02, 09[H01L]
2009/0072,218 Higher threshold voltage phase change memoryAbandonedSep 18, 07Mar 19, 09[H01L]
2009/0065,351 Method and apparatus for depositionAbandonedSep 11, 07Mar 12, 09[C23C]
2009/0068,344 System and method for manufacturing thin film electrical devicesAbandonedJul 30, 08Mar 12, 09[C23C, B05D]
2009/0029,031 Methods for forming electrodes in phase change memory devicesAbandonedMay 01, 08Jan 29, 09[B05D]
2008/0286,446 Seed-Assisted MOCVD Growth of Threshold Switching and Phase-Change MaterialsAbandonedJun 23, 08Nov 20, 08[C23C]
2008/0090,324 Forming sublithographic heaters for phase change memoriesAbandonedOct 12, 06Apr 17, 08[H01L]
2008/0064,198 Chalcogenide semiconductor memory device with insulating dielectricAbandonedSep 11, 06Mar 13, 08[H01L]

View all patents..

Top Inventors for This Owner

Upgrade to the Professional Level to View Top Inventors for this Owner. Learn More

We are sorry but your current selection exceeds the maximum number of comparisons () for this membership level. Upgrade to our Level for up to -1 comparisons!

We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level. Upgrade to our Level for up to -1 portfolios!.