PATRENELLA CAPITAL LTD., LLC

6,356,272 Texture information giving method, object extracting method, three-dimensional model generating method and apparatus for the sameNov 01, 99Mar 12, 02[G06T]35

5,955,211 Magnetoresistive filmJul 09, 97Sep 21, 99[G11B]28

6,363,169 Apparatus and method of three-dimensional modelingJul 23, 98Mar 26, 02[G06T, G06K]24

5,864,452 Thin-film magnetic head and method of forming carbon filmApr 02, 97Jan 26, 99[G11B]24

6,146,775 Magnetoresistive filmNov 17, 97Nov 14, 00[G11B]21

5,796,683 Magneto-optical recording device having a controllable polarizing filterMar 25, 97Aug 18, 98[G11B]21

5,195,004 Method of manufacturing a magnetic core halfJan 21, 92Mar 16, 93[G11B]19

6,891,742 Semiconductor memory deviceJul 12, 02May 10, 05[G11C]18

6,043,744 Antitheft systemAug 10, 98Mar 28, 00[G08B]17

7,006,952 3-D model providing deviceFeb 18, 00Feb 28, 06[G06F]15

Recent Publications

2010/0008,164 MEMORYSep 18, 09Jan 14, 10[G11C]

2009/0231,904 FERROELECTRIC MEMORY WITH SUB BIT-LINES CONNECTED TO EACH OTHER AND TO FIXED POTENTIALSMay 22, 09Sep 17, 09[G11C]

2009/0231,929 MEMORY AND CONTROL UNITMar 02, 09Sep 17, 09[G11C]

2007/0297,259 MEMORYJun 08, 07Dec 27, 07[G11C]

2007/0297,269 MEMORY AND CONTROL UNITJun 13, 07Dec 27, 07[G11C]

2007/0253,273 MEMORYApr 24, 07Nov 01, 07[G11C]

2007/0253,274 MEMORYApr 25, 07Nov 01, 07[G11C]

2007/0237,016 MemoryJun 16, 05Oct 11, 07[G11C]

2007/0223,268 MemoryMar 27, 07Sep 27, 07[G11C]

2007/0047,363 MemoryAug 24, 06Mar 01, 07[G11C]

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Recent Patents

8,077,494 Ferroelectric memory with sub bit-lines connected to each other and to fixed potentialsMay 22, 09Dec 13, 11[G11C]

7,933,148 MemorySep 18, 09Apr 26, 11[G11C]

7,933,161 Memory device configured to refresh memory cells in a power-down stateAug 24, 06Apr 26, 11[G11C]

7,821,868 Memory and control unitMar 02, 09Oct 26, 10[G11C]

7,768,845 Memory having circuitry to directly change voltages applied to bit lines and word lines in response to transitions between a read operation, first rewrite operation, and second rewrite operationMar 27, 07Aug 03, 10[G11C]

7,733,681 Ferroelectric memory with amplification between sub bit-line and main bit-lineApr 24, 07Jun 08, 10[G11C]

7,652,908 Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cellsJun 16, 05Jan 26, 10[G11C]

7,593,257 MemoryFeb 14, 06Sep 22, 09[G11C]

7,564,730 MemoryJun 08, 07Jul 21, 09[G11C]

7,558,098 Ferroelectric memory with sub bit-lines connected to each other and to fixed potentialsApr 25, 07Jul 07, 09[G11C]

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