RAMTRON INTERNATIONAL CORPORATION

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
G11C STATIC STORES 3155
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 2437
 
 
 
F42B EXPLOSIVE CHARGES, e.g. FOR BLASTING; FIREWORKS; AMMUNITION 139
 
 
 
H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE 164
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 1354

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2003/0147,288 High data rate serial ferroelectric memoryFeb 05, 02Aug 07, 03[G11C]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9330251 Authenticating ferroelectric random access memory (F-RAM) device and methodNov 12, 13May 03, 16[G06F]
7533231 Method and circuit for increasing the memory access speed of an enhanced synchronous memoryOct 13, 04May 12, 09[G06F]
5912849 Write Protection for a non-volatile memoryAug 28, 98Jun 15, 99[G11C]
5214300 Monolithic semiconductor integrated circuit ferroelectric memory deviceNov 27, 91May 25, 93[G11C, H01G, H01L]
5189254 Sealing band for an arrow-type projectileAug 12, 91Feb 23, 93[F42B]

Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2005/0122,765 Reference cell configuration for a 1T/1C ferroelectric memoryABANNov 18, 04Jun 09, 05[G11C]
6866469 Pallet loading apparatusExpiredJul 25, 01Mar 15, 05[B65G]
2004/0033,630 Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the sameABANJul 15, 03Feb 19, 04[H01L]
2003/0227,809 Temperature-adjusted pre-charged reference for an integrated circuit 1T/1C ferroelectric memoryABANJun 05, 02Dec 11, 03[G11C]
6661695 Capacitance sensing technique for ferroelectric random access memory arraysExpiredMay 01, 02Dec 09, 03[G11C]
2003/0212,935 Circuit and method for accelerating the test time of a serial access memory deviceABANMay 09, 02Nov 13, 03[G11C]
2003/0071,294 Process and structure for masking integrated capacitors of particular utility for ferroelectric memory integrated circuitsABANOct 30, 02Apr 17, 03[H01L]
6492673 Charge pump or other charge storage capacitor including PZT layer for combined use as encapsulation layer and dielectric layer of ferroelectric capacitor and a method for manufacturing the sameExpiredMay 22, 01Dec 10, 02[H01L]
6455326 Enhanced process capability for sputtered ferroelectric films using low frequency pulsed DC and RF power suppliesExpiredMay 15, 00Sep 24, 02[H01L]
6423592 PZT layer as a temporary encapsulation and hard mask for a ferroelectric capacitorExpiredJun 26, 01Jul 23, 02[H01L]
6281023 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layerExpiredJan 11, 01Aug 28, 01[H01L]
6249841 Integrated circuit memory device and method incorporating flash and ferroelectric random access memory arraysExpiredDec 03, 98Jun 19, 01[G11C]
6238933 Polarization method for minimizing the effects of hydrogen damage on ferroelectric thin film capacitorsExpiredMay 06, 99May 29, 01[H01L]
6232153 Plastic package assembly method for a ferroelectric-based integrated circuitExpiredJun 04, 98May 15, 01[H01L]
6097231 CMOS RC equivalent delay circuitExpiredMay 29, 98Aug 01, 00[H03H]
6090443 Multi-layer approach for optimizing ferroelectric film performanceExpiredApr 22, 98Jul 18, 00[C23C]
6080499 Multi-layer approach for optimizing ferroelectric film performanceExpiredJul 18, 97Jun 27, 00[B32B]
6060919 CMOS preferred state power-up latchExpiredDec 04, 98May 09, 00[H03K]
6002634 Sense amplifier latch driver circuit for a 1T/1C ferroelectric memoryExpiredNov 14, 97Dec 14, 99[G11C]
5999461 Low voltage bootstrapping circuitExpiredJun 07, 96Dec 07, 99[G11C]

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