SANDISK 3D LLC

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 43487
 
 
 
G11C STATIC STORES 32725
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 29356
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1080
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1082
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 568
 
 
 
B82Y SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES434
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 379
 
 
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 2167
 
 
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2130

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2015/0069,320 VERTICAL BIT LINE WIDE BAND GAP TFT DECODERSep 06, 13Mar 12, 15[H01L]
2015/0070,965 FET LOW CURRENT 3D ReRAM NON-VOLATILE STORAGESep 12, 13Mar 12, 15[G11C]
2015/0070,966 METHOD OF OPERATING FET LOW CURRENT 3D RE-RAMSep 12, 13Mar 12, 15[G11C]
2015/0036,414 SHARED-GATE VERTICAL-TFT FOR VERTICAL BIT LINE ARRAYJul 24, 14Feb 05, 15[G11C, H01L]
2015/0023,113 COMPENSATION SCHEME FOR NON-VOLATILE MEMORYOct 04, 14Jan 22, 15[G11C]
2014/0369,132 DIFFERENTIAL CURRENT SENSE AMPLIFIER AND METHOD FOR NON-VOLATILE MEMORYJun 14, 13Dec 18, 14[G11C]
2014/0353,566 ReRAM materials stack for low-operating-power and high-density applicationsMay 28, 13Dec 04, 14[H01L]
2014/0353,567 CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICEAug 13, 14Dec 04, 14[H01L]
2014/0353,573 METHODS AND SYSTEMS TO REDUCE LOCATION-BASED VARIATIONS IN SWITCHING CHARACTERISTICS OF 3D RERAM ARRAYSAug 18, 14Dec 04, 14[H01L]
2014/0346,433 MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STORAGE ELEMENTS AND METHODS OF FORMING THE SAMEAug 11, 14Nov 27, 14[H01L]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,980,766 Sequential atomic layer deposition of electrodes and resistive switching componentsJul 10, 14Mar 17, 15[H01L]
8,981,329 Method of forming anneal-resistant embedded resistor for non-volatile memory applicationNov 20, 14Mar 17, 15[H01L]
8,981,331 Memory cells having storage elements that share material layers with steering elements and methods of forming the sameMar 04, 13Mar 17, 15[H01L]
8,981,347 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the sameFeb 17, 14Mar 17, 15[G11C, H01L]
8,981,457 Dense arrays and charge storage devicesMay 10, 12Mar 17, 15[G11C, H01L]
8,982,597 Memory system with sectional data linesJan 31, 12Mar 17, 15[G11C]
8,975,114 Method for forming metal oxides and silicides in a memory deviceMar 14, 13Mar 10, 15[H01L]
8,975,727 Memory cell having an integrated two-terminal current limiting resistorDec 20, 12Mar 10, 15[H01L]
8,969,845 Memory cells having storage elements that share material layers with steering elements and methods of forming the sameJun 09, 14Mar 03, 15[H01L]
8,969,923 Methods and apparatus for layout of three dimensional matrix array memory for reduced cost patterningJul 17, 14Mar 03, 15[G11C, H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2013/0334,484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsABANAug 21, 13Dec 19, 13[H01L]
2013/0314,971 METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGEABANNov 16, 12Nov 28, 13[G11C, H01L]
2013/0292,634 RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAMEABANMay 07, 12Nov 07, 13[H01L]
2013/0148,404 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAMEABANDec 08, 11Jun 13, 13[G11C, H01L]
2013/0134,373 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYERABANNov 28, 11May 30, 13[H01L]
2013/0126,821 BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERSABANJan 14, 13May 23, 13[H01L]
2013/0065,377 INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONSABANSep 09, 11Mar 14, 13[H01L]
2012/0223,414 METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICESABANAug 08, 11Sep 06, 12[H01L, B82Y]
2012/0091,418 BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAMEABANOct 14, 10Apr 19, 12[H01L]
2011/0297,912 Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods ThereofABANJun 01, 11Dec 08, 11[H01L]
2011/0278,529 MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAMEABANMay 14, 10Nov 17, 11[H01L]
2011/0210,306 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEABANFeb 26, 10Sep 01, 11[H01L]
2011/0186,799 NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOFABANFeb 03, 11Aug 04, 11[H01L, B82Y]
2011/0156,044 DENSE ARRAYS AND CHARGE STORAGE DEVICESABANFeb 14, 11Jun 30, 11[H01L]
2010/0301,449 METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHYABANAug 13, 10Dec 02, 10[B29C, H01L]
2010/0283,053 NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATUREABANMay 11, 09Nov 11, 10[H01L]
2010/0102,291 CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAMEABANOct 22, 09Apr 29, 10[H01L]
2010/0078,758 MIIM DIODESABANSep 29, 08Apr 01, 10[G11C, H01L]
2010/0032,640 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEABANAug 05, 09Feb 11, 10[H01L]
2010/0012,914 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAMEABANJul 17, 09Jan 21, 10[H01L]

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