SANDISK 3D LLC

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Technologies

Intl Class Technology # of Patents/ App Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 42285
 
 
 
G11C STATIC STORES 31127
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 31349
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1080
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1085
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 565
 
 
 
B82Y SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES338
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 282
 
 
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 2166
 
 
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2130

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2014/0299,834 Memory Device Having An Integrated Two-Terminal Current Limiting ResistorMay 27, 14Oct 09, 14[H01L]
2014/0301,130 VERTICAL CROSS POINT RERAM FORMING METHODApr 05, 14Oct 09, 14[G11C]
2014/0301,131 MULTIPLE LAYER FORMING SCHEME FOR VERTICAL CROSS POINT RERAMApr 05, 14Oct 09, 14[G11C]
2014/0284,538 MEMORY CELLS HAVING STORAGE ELEMENTS THAT SHARE MATERIAL LAYERS WITH STEERING ELEMENTS AND METHODS OF FORMING THE SAMEJun 09, 14Sep 25, 14[H01L]
2014/0284,545 In-Situ Nitride Initiation Layer For RRAM Metal Oxide Switching MaterialApr 23, 14Sep 25, 14[H01L]
2014/0264,223 Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access CellsMar 15, 13Sep 18, 14[H01L]
2014/0264,231 Confined Defect Profiling within Resistive Random Memory Access CellsMay 10, 13Sep 18, 14[H01L]
2014/0269,106 Program Cycle Skip Evaluation Before Write Operations In Non-Volatile MemoryMar 15, 13Sep 18, 14[G11C]
2014/0269,129 METHODS AND APPARATUS FOR REDUCING PROGRAMMING TIME OF A MEMORY CELLMay 29, 14Sep 18, 14[G11C]
2014/0272,576 METHODS AND APPARATUS FOR HIGH CAPACITY ANODES FOR LITHIUM BATTERIESMar 14, 13Sep 18, 14[H01M]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,866,118 Morphology control of ultra-thin MeOx layerDec 21, 12Oct 21, 14[H01L]
8,866,121 Current-limiting layer and a current-reducing layer in a memory deviceFeb 17, 12Oct 21, 14[G11C, H01L]
8,866,124 Diodes with native oxide regions for use in memory arrays and methods of forming the sameFeb 02, 11Oct 21, 14[H01L]
8,859,328 Multifunctional electrodeApr 16, 14Oct 14, 14[H01L]
8,860,002 Limited maximum fields of electrode-switching layer interfaces in Re-RAM cellsDec 20, 12Oct 14, 14[H01L]
8,860,501 Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage rippleApr 22, 14Oct 14, 14[G11C, G05F]
8,861,258 Set/reset algorithm which detects and repairs weak cells in resistive-switching memory deviceFeb 21, 13Oct 14, 14[G11C]
8,852,996 Carbon doped resistive switching layersDec 20, 12Oct 07, 14[H01L]
8,853,099 Nonvolatile resistive memory element with a metal nitride containing switching layerDec 16, 11Oct 07, 14[H01L]
8,853,661 Metal aluminum nitride embedded resistors for resistive random memory access cellsMar 15, 13Oct 07, 14[H01L]
8,853,765 Dense arrays and charge storage devicesMar 27, 14Oct 07, 14[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Filing Date Issue/Pub Date Intl Class
2013/0314,971 METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGENov 16, 12Nov 28, 13[G11C, H01L]
2013/0148,404 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAMEDec 08, 11Jun 13, 13[G11C, H01L]
2013/0134,373 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYERNov 28, 11May 30, 13[H01L]
2013/0065,377 INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONSSep 09, 11Mar 14, 13[H01L]
2012/0223,414 METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICESAug 08, 11Sep 06, 12[H01L, B82Y]
2012/0091,418 BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAMEOct 14, 10Apr 19, 12[H01L]
2011/0278,529 MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAMEMay 14, 10Nov 17, 11[H01L]
2011/0210,306 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEFeb 26, 10Sep 01, 11[H01L]
2011/0186,799 NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOFFeb 03, 11Aug 04, 11[H01L, B82Y]
2011/0156,044 DENSE ARRAYS AND CHARGE STORAGE DEVICESFeb 14, 11Jun 30, 11[H01L]
2010/0301,449 METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHYAug 13, 10Dec 02, 10[B29C, H01L]
2010/0283,053 NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATUREMay 11, 09Nov 11, 10[H01L]
2010/0102,291 CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAMEOct 22, 09Apr 29, 10[H01L]
2010/0078,758 MIIM DIODESSep 29, 08Apr 01, 10[G11C, H01L]
2010/0032,640 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEAug 05, 09Feb 11, 10[H01L]
2010/0012,914 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAMEJul 17, 09Jan 21, 10[H01L]
2010/0006,812 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAMEJul 08, 09Jan 14, 10[H01L]
2009/0327,535 ADJUSTABLE READ LATENCY FOR MEMORY DEVICE IN PAGE-MODE ACCESSJun 30, 08Dec 31, 09[G06F]
2009/0282,267 PARTIAL SCRAMBLING TO REDUCE CORRELATIONJun 30, 08Nov 12, 09[H04L]
2009/0273,022 CONDUCTIVE HARD MASK TO PROTECT PATTERNED FEATURES DURING TRENCH ETCHJul 14, 09Nov 05, 09[H01L]

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