SANDISK 3D LLC

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Technologies

Intl Class Technology # of Patents Rank
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 29189
 
 
 
G11C STATIC STORES 24427
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 28300
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1073
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 878
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 562
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 265
 
 
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 2147
 
 
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 261
 
 
 
B05D PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 170

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2014/0091,381 SUPPORT LINES TO PREVENT LINE COLLAPSE IN ARRAYSOct 03, 12Apr 03, 14[H01L]
2014/0084,237 DEFECT GRADIENT TO BOOST NONVOLATILE MEMORY PERFORMANCENov 08, 13Mar 27, 14[H01L]
2014/0078,851 CONTINUOUS MESH THREE DIMENSIONAL NON-VOLATILE STORAGE WITH VERTICAL SELECT DEVICESNov 25, 13Mar 20, 14[G11C]
2014/0080,272 CONTINUOUS MESH THREE DIMENSIONAL NON-VOLATILE STORAGE WITH VERTICAL SELECT DEVICESNov 25, 13Mar 20, 14[H01L]
2014/0065,790 Work Function Tailoring for Nonvolatile Memory ApplicationsNov 13, 13Mar 06, 14[H01L]
2014/0051,223 Memory Device Having An Integrated Two-Terminal Current Limiting ResistorOct 28, 13Feb 20, 14[H01L]
2014/0043,911 Method For Non-Volatile Memory Having 3D Array of Read/Write Elements with Efficient Decoding of Vertical Bit Lines and Word LinesOct 18, 13Feb 13, 14[G11C]
2014/0029,356 TEMPERATURE COMPENSATION OF CONDUCTIVE BRIDGE MEMORY ARRAYSOct 02, 13Jan 30, 14[G11C]
2014/0022,848 NON-VOLATILE MEMORY HAVING 3D ARRAY OF READ/WRITE ELEMENTS AND READ/WRITE CIRCUITS AND METHOD THEREOFAug 22, 13Jan 23, 14[G11C]
2013/0334,484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsAug 21, 13Dec 19, 13[H01L]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,693,233 Re-writable resistance-switching memory with balanced series stackJan 31, 12Apr 08, 14[G11C]
8,686,386 Nonvolatile memory device using a varistor as a current limiter elementFeb 17, 12Apr 01, 14[H01L]
8,686,419 Structure and fabrication method for resistance-change memory cell in 3-D memoryFeb 17, 11Apr 01, 14[H01L]
8,686,476 Resistance-switching memory cells adapted for use at low voltageJan 04, 13Apr 01, 14[H01L]
8,687,410 Nonvolatile memory cell comprising a diode and a resistance-switching materialJan 04, 13Apr 01, 14[G11C]
8,679,901 Memory cell that includes a sidewall collar for pillar isolation and methods of forming the sameApr 23, 13Mar 25, 14[H01L]
8,679,967 Apparatus and methods of forming memory lines and structures using double sidewall patterning for four times half pitch relief patterningOct 26, 10Mar 25, 14[H01L]
8,680,503 Carbon nano-film reversible resistance-switchable elements and methods of forming the sameMar 09, 12Mar 25, 14[H01L]
8,681,530 Nonvolatile memory device having a current limiting elementJan 18, 12Mar 25, 14[G11C, H01L]
8,658,526 Methods for increased array feature densityFeb 06, 13Feb 25, 14[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Filing Date Issue/Pub Date Intl Class
2011/0156,044 DENSE ARRAYS AND CHARGE STORAGE DEVICESFeb 14, 11Jun 30, 11[H01L]
2010/0283,053 NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATUREMay 11, 09Nov 11, 10[H01L]
2009/0282,267 PARTIAL SCRAMBLING TO REDUCE CORRELATIONJun 30, 08Nov 12, 09[H04L]
2009/0086,521 MULTIPLE ANTIFUSE MEMORY CELLS AND METHODS TO FORM, PROGRAM, AND SENSE THE SAMESep 28, 07Apr 02, 09[G11C, H01L]
2009/0087,993 METHODS AND APPARATUS FOR COST-EFFECTIVELY INCREASING FEATURE DENSITY USING A MASK SHRINKING PROCESS WITH DOUBLE PATTERNINGSep 28, 07Apr 02, 09[H01L]
2009/0003,083 Memory cell with voltage modulated sidewall poly resistorJun 28, 07Jan 01, 09[G11C]
2008/0315,206 Highly Scalable Thin Film TransistorJun 19, 07Dec 25, 08[H01L]
2008/0023,790 Mixed-use memory arrayJul 31, 06Jan 31, 08[G11C, H01L]
2008/0025,069 Mixed-use memory array with different data statesJul 31, 06Jan 31, 08[G11C]
2008/0017,890 Highly dense monolithic three dimensional memory array and method for formingJun 30, 06Jan 24, 08[H01L]
2007/0164,388 MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATEMar 30, 07Jul 19, 07[H01L]
2007/0102,724 Vertical diode doped with antimony to avoid or limit dopant diffusionNov 10, 05May 10, 07[H01L]
2007/0069,241 Memory with high dielectric constant antifuses and method for using at low voltageJul 01, 05Mar 29, 07[H01L]
2007/0069,276 Multi-use memory cell and memory arrayJul 31, 06Mar 29, 07[H01L]
2007/0029,607 Dense arrays and charge storage devicesOct 10, 06Feb 08, 07[H01L]
2007/0007,577 Integrated circuit embodying a non-volatile memory cellJul 06, 05Jan 11, 07[H01L]
2007/0010,100 Method of plasma etching transition metals and their compoundsJul 11, 05Jan 11, 07[H01L]
2006/0273,298 Rewriteable memory cell comprising a transistor and resistance-switching material in seriesJun 02, 05Dec 07, 06[H01L]
2006/0250,177 Methods and apparatus for dynamically reconfiguring a charge pump during output transientsMay 09, 05Nov 09, 06[G05F]
2006/0250,836 Rewriteable memory cell comprising a diode and a resistance-switching materialMay 09, 05Nov 09, 06[G11C]

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