SANDISK 3D LLC

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Technologies

Intl Class Technology # of Patents/ App Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 43485
 
 
 
G11C STATIC STORES 32124
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 30358
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1080
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1083
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 567
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 379
 
 
 
B82Y SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES336
 
 
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 2170
 
 
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2130

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2015/0023,113 COMPENSATION SCHEME FOR NON-VOLATILE MEMORYOct 04, 14Jan 22, 15[G11C]
2015/0023,115 COMPENSATION SCHEME FOR NON-VOLATILE MEMORYOct 04, 14Jan 22, 15[G11C]
2014/0374,688 High Capacity Select Switches for Three-Dimensional StructuresJun 24, 13Dec 25, 14[H01L]
2014/0369,132 DIFFERENTIAL CURRENT SENSE AMPLIFIER AND METHOD FOR NON-VOLATILE MEMORYJun 14, 13Dec 18, 14[G11C]
2014/0353,566 ReRAM materials stack for low-operating-power and high-density applicationsMay 28, 13Dec 04, 14[H01L]
2014/0353,567 CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICEAug 13, 14Dec 04, 14[H01L]
2014/0353,573 METHODS AND SYSTEMS TO REDUCE LOCATION-BASED VARIATIONS IN SWITCHING CHARACTERISTICS OF 3D RERAM ARRAYSAug 18, 14Dec 04, 14[H01L]
2014/0347,912 SENSE AMPLIFIER LOCAL FEEDBACK TO CONTROL BIT LINE VOLTAGEMay 20, 14Nov 27, 14[G11C]
2014/0299,834 Memory Device Having An Integrated Two-Terminal Current Limiting ResistorMay 27, 14Oct 09, 14[H01L]
2014/0301,130 VERTICAL CROSS POINT RERAM FORMING METHODApr 05, 14Oct 09, 14[G11C]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,937,011 Method of forming crack free gap fillJan 15, 13Jan 20, 15[H01L]
8,933,516 High capacity select switches for three-dimensional structuresJun 24, 13Jan 13, 15[H01L]
8,934,292 Balanced method for programming multi-layer cell memoriesMar 18, 11Jan 13, 15[G11C]
8,934,295 Compensation scheme for non-volatile memoryOct 04, 14Jan 13, 15[G11C]
8,921,154 Method of forming anneal-resistant embedded resistor for non-volatile memory applicationAug 26, 14Dec 30, 14[H01L]
8,923,050 3D memory with vertical bit lines and staircase word lines and vertical switches and methods thereofMar 15, 13Dec 30, 14[G11C, G06F, H01L]
8,912,524 Defect gradient to boost nonvolatile memory performanceNov 08, 13Dec 16, 14[H01L]
8,913,413 Memory system with sectional data linesJan 31, 12Dec 16, 14[G11C]
8,913,417 Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the sameJul 24, 12Dec 16, 14[G11C, H01L]
8,913,418 Confined defect profiling within resistive random memory access cellsMay 10, 13Dec 16, 14[G11C, H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Filing Date Issue/Pub Date Intl Class
2013/0334,484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsAug 21, 13Dec 19, 13[H01L]
2013/0314,971 METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGENov 16, 12Nov 28, 13[G11C, H01L]
2013/0292,634 RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAMEMay 07, 12Nov 07, 13[H01L]
2013/0148,404 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAMEDec 08, 11Jun 13, 13[G11C, H01L]
2013/0134,373 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYERNov 28, 11May 30, 13[H01L]
2013/0065,377 INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONSSep 09, 11Mar 14, 13[H01L]
2012/0223,414 METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICESAug 08, 11Sep 06, 12[H01L, B82Y]
2012/0091,418 BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAMEOct 14, 10Apr 19, 12[H01L]
2011/0278,529 MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAMEMay 14, 10Nov 17, 11[H01L]
2011/0210,306 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEFeb 26, 10Sep 01, 11[H01L]
2011/0186,799 NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOFFeb 03, 11Aug 04, 11[H01L, B82Y]
2011/0156,044 DENSE ARRAYS AND CHARGE STORAGE DEVICESFeb 14, 11Jun 30, 11[H01L]
2010/0301,449 METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHYAug 13, 10Dec 02, 10[B29C, H01L]
2010/0283,053 NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATUREMay 11, 09Nov 11, 10[H01L]
2010/0102,291 CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAMEOct 22, 09Apr 29, 10[H01L]
2010/0078,758 MIIM DIODESSep 29, 08Apr 01, 10[G11C, H01L]
2010/0032,640 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEAug 05, 09Feb 11, 10[H01L]
2010/0012,914 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAMEJul 17, 09Jan 21, 10[H01L]
2010/0006,812 CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAMEJul 08, 09Jan 14, 10[H01L]
2009/0327,535 ADJUSTABLE READ LATENCY FOR MEMORY DEVICE IN PAGE-MODE ACCESSJun 30, 08Dec 31, 09[G06F]

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