SANDISK 3D LLC

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 44186
 
 
 
G11C STATIC STORES 33328
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 30367
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 1078
 
 
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 1084
 
 
 
H03L AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES 569
 
 
 
B82Y SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES435
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 379
 
 
 
G06K RECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS 2174
 
 
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2126

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2015/0131,360 VERTICAL 1T-1R MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING THE SAMENov 08, 13May 14, 15[G11C, H01L]
2015/0106,554 Regrouping and Skipping Cycles in Non-Volatile MemoryOct 15, 14Apr 16, 15[G11C, G06F]
2015/0093,876 Doped Oxide Dielectrics for Resistive Random Access Memory CellsDec 10, 14Apr 02, 15[H01L]
2015/0069,320 VERTICAL BIT LINE WIDE BAND GAP TFT DECODERSep 06, 13Mar 12, 15[H01L]
2015/0070,965 FET LOW CURRENT 3D ReRAM NON-VOLATILE STORAGESep 12, 13Mar 12, 15[G11C]
2015/0036,414 SHARED-GATE VERTICAL-TFT FOR VERTICAL BIT LINE ARRAYJul 24, 14Feb 05, 15[G11C, H01L]
2014/0369,132 DIFFERENTIAL CURRENT SENSE AMPLIFIER AND METHOD FOR NON-VOLATILE MEMORYJun 14, 13Dec 18, 14[G11C]
2014/0353,567 CURRENT-LIMITING LAYER AND A CURRENT-REDUCING LAYER IN A MEMORY DEVICEAug 13, 14Dec 04, 14[H01L]
2014/0353,573 METHODS AND SYSTEMS TO REDUCE LOCATION-BASED VARIATIONS IN SWITCHING CHARACTERISTICS OF 3D RERAM ARRAYSAug 18, 14Dec 04, 14[H01L]
2014/0346,433 MULTI-LEVEL MEMORY ARRAYS WITH MEMORY CELLS THAT EMPLOY BIPOLAR STORAGE ELEMENTS AND METHODS OF FORMING THE SAMEAug 11, 14Nov 27, 14[H01L]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9,034,689 Non-volatile storage with metal oxide switching element and methods for fabricating the sameMar 21, 13May 19, 15[G11C, H01L]
9,030,859 Three dimensional non-volatile storage with dual layers of select devicesDec 12, 11May 12, 15[G11C, H01L]
9,025,372 Large array of upward pointing p-i-n diodes having large and uniform currentApr 10, 14May 05, 15[G11C, H01L, B82Y]
9,012,879 Morphology control of ultra-thin MeOx layerSep 22, 14Apr 21, 15[H01L]
9,006,026 Atomic layer deposition of metal oxides for memory applicationsAug 22, 14Apr 14, 15[H01L]
9,006,696 Metal aluminum nitride embedded resistors for resistive random memory access cellsSep 08, 14Apr 14, 15[H01L]
9,006,795 Resistance-switching memory cells adapted for use at low voltageFeb 14, 14Apr 14, 15[G11C, H01L]
9,007,810 ReRAM forming with reset and iload compensationFeb 28, 13Apr 14, 15[G11C]
9,000,407 ReRAM materials stack for low-operating-power and high-density applicationsMay 28, 13Apr 07, 15[H01L]
9,001,554 Resistive random access memory cell having three or more resistive statesJan 10, 13Apr 07, 15[G11C, H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2014/0252,298 METHODS AND APPARATUS FOR METAL OXIDE REVERSIBLE RESISTANCE-SWITCHING MEMORY DEVICESABANMar 10, 13Sep 11, 14[H01L]
2013/0334,484 Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsABANAug 21, 13Dec 19, 13[H01L]
2013/0314,971 METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGEABANNov 16, 12Nov 28, 13[G11C, H01L]
2013/0292,634 RESISTANCE-SWITCHING MEMORY CELLS HAVING REDUCED METAL MIGRATION AND LOW CURRENT OPERATION AND METHODS OF FORMING THE SAMEABANMay 07, 12Nov 07, 13[H01L]
2013/0148,404 ANTIFUSE-BASED MEMORY CELLS HAVING MULTIPLE MEMORY STATES AND METHODS OF FORMING THE SAMEABANDec 08, 11Jun 13, 13[G11C, H01L]
2013/0134,373 NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYERABANNov 28, 11May 30, 13[H01L]
2013/0126,821 BOTTOM ELECTRODES FOR USE WITH METAL OXIDE RESISTIVITY SWITCHING LAYERSABANJan 14, 13May 23, 13[H01L]
2013/0075,685 METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICESABANSep 22, 11Mar 28, 13[H01L, B82Y]
2013/0065,377 INTERFACE LAYER IMPROVEMENTS FOR NONVOLATILE MEMORY APPLICATIONSABANSep 09, 11Mar 14, 13[H01L]
2012/0223,414 METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICESABANAug 08, 11Sep 06, 12[H01L, B82Y]
2012/0091,418 BIPOLAR STORAGE ELEMENTS FOR USE IN MEMORY CELLS AND METHODS OF FORMING THE SAMEABANOct 14, 10Apr 19, 12[H01L]
2011/0297,912 Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods ThereofABANJun 01, 11Dec 08, 11[H01L]
2011/0278,529 MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAMEABANMay 14, 10Nov 17, 11[H01L]
2011/0210,306 MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAMEABANFeb 26, 10Sep 01, 11[H01L]
2011/0186,799 NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOFABANFeb 03, 11Aug 04, 11[H01L, B82Y]
2011/0156,044 DENSE ARRAYS AND CHARGE STORAGE DEVICESABANFeb 14, 11Jun 30, 11[H01L]
7,924,602 Method to program a memory cell comprising a carbon nanotube fabric element and a steering elementExpiredJan 26, 10Apr 12, 11[G11C]
2010/0301,449 METHODS AND APPARATUS FOR FORMING LINE AND PILLAR STRUCTURES FOR THREE DIMENSIONAL MEMORY ARRAYS USING A DOUBLE SUBTRACTIVE PROCESS AND IMPRINT LITHOGRAPHYABANAug 13, 10Dec 02, 10[B29C, H01L]
2010/0283,053 NONVOLATILE MEMORY ARRAY COMPRISING SILICON-BASED DIODES FABRICATED AT LOW TEMPERATUREABANMay 11, 09Nov 11, 10[H01L]
2010/0102,291 CARBON-BASED MEMORY ELEMENTS EXHIBITING REDUCED DELAMINATION AND METHODS OF FORMING THE SAMEABANOct 22, 09Apr 29, 10[H01L]

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