SANDISK CORPORATION

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Technologies

Intl Class Technology # of Patents Rank
 
 
 
G11C STATIC STORES 9061
 
 
 
G06F ELECTRIC DIGITAL DATA PROCESSING 50257
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 34228
 
 
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM3118
 
 
 
G03F PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR 381
 
 
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 2124
 
 
 
A47G HOUSEHOLD OR TABLE EQUIPMENT 121
 
 
 
A61K PREPARATIONS FOR MEDICAL, DENTAL, OR TOILET PURPOSES 1198
 
 
 
C01B NON-METALLIC ELEMENTS; COMPOUNDS THEREOF141
 
 
 
C03C CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS138

Top Patents (by citation)

Patent # Title Filing Date Issue Date Intl Class Cited #
6,522,580 Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data statesJun 27, 01Feb 18, 03[G11C]564
5,297,148 Flash eeprom systemOct 20, 92Mar 22, 94[G06F]505
5,602,987 Flash EEprom systemDec 29, 93Feb 11, 97[G06F]412
5,663,901 Computer memory cards using flash EEPROM integrated circuit chips and memory-controller systemsSep 12, 95Sep 02, 97[G11C, G06F]318
6,426,893 Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocksFeb 17, 00Jul 30, 02[G11C]312
5,887,145 Removable mother/daughter peripheral cardJan 09, 97Mar 23, 99[G06F]234
6,643,188 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cellJan 22, 02Nov 04, 03[G11C]223
6,763,424 Partial block data programming and reading operations in a non-volatile memoryJan 19, 01Jul 13, 04[G06F]194
5,535,328 Non-volatile memory system card with flash erasable sectors of EEprom cells including a mechanism for substituting defective cellsFeb 23, 95Jul 09, 96[G06F]181
5,719,808 Flash EEPROM systemMar 21, 95Feb 17, 98[G11C]169

Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2013/0138,846 ENHANCED DATA STORAGE DEVICEJan 16, 13May 30, 13[G06F]
2012/0236,657 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELLMay 29, 12Sep 20, 12[G11C]
2011/0204,432 Methods and Devices for Forming Nanostructure Monolayers and Devices Including Such MonolayersApr 29, 11Aug 25, 11[H01L]
2011/0113,158 ENHANCED DATA STORAGE DEVICEJan 18, 11May 12, 11[G06F]
2011/0090,741 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE ADAPTED TO STORE A MULTI-VALUED DATA IN A SINGLE MEMORY CELLDec 14, 10Apr 21, 11[G11C]
2011/0034,038 Methods and devices for forming nanostructure monolayers and devices including such monolayersJun 29, 10Feb 10, 11[H01L]
2010/0289,465 TRANSIENT LOAD VOLTAGE REGULATORMay 12, 09Nov 18, 10[G05F]
2010/0199,032 ENHANCED DATA COMMUNICATION BY A NON-VOLATILE MEMORY CARDApr 16, 10Aug 05, 10[G06F]
2010/0155,786 Methods and devices for forming nanostructure monolayers and devices including such monolayersJul 27, 07Jun 24, 10[H01L]
2010/0117,053 METAL OXIDE MATERIALS AND ELECTRODES FOR RE-RAMFeb 03, 09May 13, 10[H01L]

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,386,678 Enhanced data storage deviceJan 18, 11Feb 26, 13[G06F]
8,386,861 Non-volatile memory and method with post-write read and adaptive re-write to manage errorsJul 02, 12Feb 26, 13[G06F]
8,316,177 Partial block data programming and reading operations in a non-volatile memoryJun 24, 11Nov 20, 12[G06F]
8,304,754 Metal oxide materials and electrodes for Re-RAMFeb 03, 09Nov 06, 12[G11B]
8,298,931 Dual damascene with amorphous carbon for 3D deep via/trench applicationSep 28, 07Oct 30, 12[H01L]
8,263,420 Optimized electrodes for Re-RAMFeb 03, 09Sep 11, 12[H01L]
8,223,547 Flash EEprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocksFeb 14, 11Jul 17, 12[G11C]
8,208,311 Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cellDec 14, 10Jun 26, 12[G11C]
8,163,593 Method of making a nonvolatile phase change memory cell having a reduced contact areaNov 16, 06Apr 24, 12[H01L]
8,143,703 Methods and devices for forming nanostructure monolayers and devices including such monolayersNov 05, 08Mar 27, 12[H01L]

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Top Inventors for This Owner

Inventor Name Address # of Patent/Pub
Harari Eliyahou
Los Gatos, CA
63
Chen Jian
San Jose, CA
41
Norman Robert D
San Jose, CA
37
Mehrotra Sanjay
Milpitas, CA
33
Conley Kevin M
San Jose, CA
29
Tanaka Tomoharu
Yokohama-shi, JP
28
Gorobets Sergey Anatolievich
Edinburgh, GB
26
Wallace Robert F
Sunnyvale, CA
23
Holtzman Michael
Cupertino, CA
21
Jogand-Coulomb Fabrice
San Carlos, CA
19