SHANGHAI HUALI MICROELECTRONICS CORPORATION
Patent Owner
Stats
- 63 US PATENTS IN FORCE
- 5 US APPLICATIONS PENDING
- Feb 01, 2018 most recent publication
Details
- 63 Issued Patents
- 0 Issued in last 3 years
- 0 Published in last 3 years
- 234 Total Citation Count
- Dec 29, 2011 Earliest Filing
- 36 Expired/Abandoned/Withdrawn Patents
Patent Activity in the Last 10 Years
Technologies
Intl Class
Technology
Matters
Rank in Class
Top Patents (by citation)
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Recent Publications
Publication #
Title
Filing Date
Pub Date
Intl Class
2017/0250,265 SEMICONDUCTOR DEVICE WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND DOUBLE TRENCH MANUFACTURING PROCESSES THEREOFMay 15, 17Aug 31, 17[H01L]
2017/0062,583 METHODS AND SYSTEMS FOR REDUCING DISLOCATION DEFECTS IN HIGH CONCENTRATION EPITAXY PROCESSESOct 08, 15Mar 02, 17[H01L]
Recent Patents
Patent #
Title
Filing Date
Issue Date
Intl Class
9831251 Method of fabricating semiconductor device and semiconductor device fabricated therebyAug 12, 16Nov 28, 17[H01L]
9666472 Method for establishing mapping relation in STI etch and controlling critical dimension of STIMar 29, 16May 30, 17[H01L]
9583619 Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereofApr 20, 15Feb 28, 17[H01L]
9449866 Methods and systems for using oxidation layers to improve device surface uniformityJan 06, 15Sep 20, 16[H01L]
Expired/Abandoned/Withdrawn Patents
Patent #
Title
Status
Filing Date
Issue/Pub Date
Intl Class
2016/0322,476 METHOD OF MANUFACTURING A FIN FIELD EFFECT TRANSISTORAbandonedJul 06, 15Nov 03, 16[H01L]
2016/0291,458 METHOD INTEGRATING TARGET OPTIMIZATION AND OPTICAL PROXIMITY CORRECTIONAbandonedJun 29, 15Oct 06, 16[G06F, G03F]
2016/0240,680 SEMICONDUCTOR DEVICE HAVING A SILICON AND GERMANIUM MATERIAL FILLING A CAVITY REGION COMPRISING A NOTCH REGION FORMED WITHIN A SEMICONDUCTOR SUBSTRATEAbandonedApr 20, 15Aug 18, 16[H01L]
2015/0017,785 METHOD OF FORMING SALICIDE BLOCK WITH REDUCED DEFECTSAbandonedNov 15, 13Jan 15, 15[H01L]
2015/0004,767 METHOD OF FORMING NICKEL SALICIDE ON A SILICON-GERMANIUM LAYERAbandonedDec 05, 13Jan 01, 15[H01L]
2014/0357,070 METHOD OF IMPROVING THE YIELD OF A SEMICONDUCTOR DEVICEAbandonedNov 20, 13Dec 04, 14[H01L]
2014/0145,284 PHOTODIODE FOR AN IMAGE SENSOR AND METHOD OF FABRICATING THE SAMEAbandonedOct 16, 13May 29, 14[H01L]
2014/0124,849 B4-FLASH DEVICE AND THE MANUFACTURING METHOD THEROFAbandonedNov 01, 13May 08, 14[H01L]
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