Silicon Genesis Corporation

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 115249
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 893
 
  
 
C30B SINGLE-CRYSTAL GROWTH 650
 
  
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM4153
 
  
 
B26F PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING 214
 
  
 
H05H PLASMA TECHNIQUE 228
 
  
 
B23K SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM 192
 
  
 
B24C ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL117
 
  
 
B28D WORKING STONE OR STONE-LIKE MATERIALS 121
 
  
 
B44C PRODUCING DECORATIVE EFFECTS 133

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0301,657 THREE DIMENSIONAL INTEGRATED CIRCUITJun 08, 17Oct 19, 17[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9704835 Three dimensional integrated circuitJan 11, 16Jul 11, 17[H01L]
9640711 Substrate cleaving under controlled stress conditionsMay 27, 16May 02, 17[H01L, B26F]
9460908 Method and device for slicing a shaped silicon ingot using layer transferDec 13, 13Oct 04, 16[H01L, B28D, C30B]
9362439 Layer transfer of films utilizing controlled shear regionMay 04, 09Jun 07, 16[H01L]
9356181 Substrate cleaving under controlled stress conditionsFeb 10, 15May 31, 16[H01L, B26F]
9336989 Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving processFeb 13, 13May 10, 16[H01J, C30B]
9257339 Techniques for forming optoelectronic devicesMay 02, 13Feb 09, 16[H01L, C30B]
9159605 Controlled process and resulting deviceAug 28, 14Oct 13, 15[H01L]
8993410 Substrate cleaving under controlled stress conditionsSep 02, 11Mar 31, 15[H01L]
8835282 Controlled process and resulting deviceJan 16, 13Sep 16, 14[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2015/0044,447 CLEAVING THIN LAYER FROM BULK MATERIAL AND APPARATUS INCLUDING CLEAVED THIN LAYERAbandonedOct 24, 14Feb 12, 15[H04M, C30B]
8330126 Race track configuration and method for wafering silicon solar substratesExpiredJul 29, 09Dec 11, 12[H01L]
2011/0294,306 CONTROLLED PROCESS AND RESULTING DEVICEAbandonedAug 10, 11Dec 01, 11[H01L]
7595499 Method and system for fabricating strained layers for the manufacture of integrated circuitsExpiredFeb 19, 08Sep 29, 09[H01L]
2009/0206,275 ACCELERATOR PARTICLE BEAM APPARATUS AND METHOD FOR LOW CONTAMINATE PROCESSINGAbandonedOct 02, 08Aug 20, 09[H01J, A61N]
2009/0152,162 CARRIER APPARATUS AND METHOD FOR SHAPED SHEET MATERIALSAbandonedDec 13, 07Jun 18, 09[B65D]
7547609 Method and structure for implanting bonded substrates for electrical conductivityExpiredNov 15, 05Jun 16, 09[H01L]
2009/0093,103 Method and device for controlled cleaving processAbandonedDec 09, 08Apr 09, 09[H01L]
7462526 Method for fabricating semiconductor devices using strained silicon bearing materialExpiredJun 09, 05Dec 09, 08[H01L]
2008/0206,963 Cleaving process to fabricate multilayered substrates using low implantation dosesAbandonedApr 18, 08Aug 28, 08[H01L]
2008/0188,011 APPARATUS AND METHOD OF TEMPERATURE CONROL DURING CLEAVING PROCESSES OF THICK FILM MATERIALSAbandonedJan 24, 08Aug 07, 08[H01L, G21K, B23K]
2008/0153,220 Method for fabricating semiconductor devices using strained silicon bearing materialAbandonedFeb 15, 08Jun 26, 08[H01L]
2008/0128,641 APPARATUS AND METHOD FOR INTRODUCING PARTICLES USING A RADIO FREQUENCY QUADRUPOLE LINEAR ACCELERATOR FOR SEMICONDUCTOR MATERIALSAbandonedNov 07, 07Jun 05, 08[G21K, H05H]
2007/0259,526 Surface finishing of SOI substrates using an EPI processAbandonedJul 11, 07Nov 08, 07[H01L]
2007/0122,997 CONTROLLED PROCESS AND RESULTING DEVICEAbandonedJan 26, 07May 31, 07[H01L]
2007/0051,299 Non-contact etch annealing of strained layersAbandonedNov 07, 06Mar 08, 07[C30B]
2007/0029,043 Pre-made cleavable substrate method and structure of fabricating devices using one or more films provided by a layer transfer processAbandonedAug 08, 05Feb 08, 07[B29C]
2007/0032,044 Method and structure for fabricating devices using one or more films provided by a layer transfer process and etch backAbandonedAug 08, 05Feb 08, 07[H01L]
2006/0240,645 Method and system for source switching and in-situ plasma bondingAbandonedJun 23, 06Oct 26, 06[H01L]
2005/0247,668 Method for smoothing a film of material using a ring structureAbandonedMay 06, 04Nov 10, 05[H01L, B44C]

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