Siliconix incorporated

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 146221
 
  
 
H03K PULSE TECHNIQUE 12119
 
  
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 572
 
  
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 496
 
  
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 399
 
  
 
H01H ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES 292
 
  
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2152
 
  
 
C07C ACYCLIC OR CARBOCYCLIC COMPOUNDS 1137
 
  
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 1100
 
  
 
G01R MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES 1158

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
7795675 Termination for trench MIS deviceSep 21, 05Sep 14, 10[H01L]
7704836 Method of fabricating super trench MOSFET including buried source electrodeMar 31, 08Apr 27, 10[H01L]
7557409 Super trench MOSFET including buried source electrodeJan 26, 07Jul 07, 09[H01L]
7435650 Process for manufacturing trench MIS device having implanted drain-drift region and thick bottom oxideJun 21, 04Oct 14, 08[H01L]
7416947 Method of fabricating trench MIS device with thick oxide layer in bottom of trenchJan 19, 06Aug 26, 08[H01L]
7394150 Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleysNov 23, 04Jul 01, 08[H01L]
7326995 Trench MIS device having implanted drain-drift region and thick bottom oxideJun 22, 05Feb 05, 08[H01L]
7291884 Trench MIS device having implanted drain-drift region and thick bottom oxideJun 04, 03Nov 06, 07[H01L]
7268032 Termination for trench MIS device having implanted drain-drift regionSep 21, 05Sep 11, 07[H01L]
7238551 Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleysNov 23, 04Jul 03, 07[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2010/0019,316 Method of fabricating super trench MOSFET including buried source electrodeAbandonedSep 29, 09Jan 28, 10[H01L]
2006/0038,223 Trench MOSFET having drain-drift region comprising stack of implanted regionsAbandonedAug 23, 05Feb 23, 06[H01L]
2004/0113,201 Structures of and methods of fabricating trench-gated MIS devicesAbandonedSep 22, 03Jun 17, 04[H01L]
2004/0038,481 Trench MOSFET having implanted drain-drift region and process for manufacturing the sameAbandonedAug 27, 03Feb 26, 04[H01L]
5825145 Quiet commutation circuit for an electric motorExpiredDec 18, 95Oct 20, 98[H02P]
5770503 Method of forming low threshold voltage vertical power transistor using epitaxial technologyExpiredJul 17, 97Jun 23, 98[H01L]
5753529 Surface mount and flip chip technology for total integrated circuit isolationExpiredMay 19, 95May 19, 98[H01L]
5670862 Rapid charging technique for lithium ion batteriesExpiredMar 12, 96Sep 23, 97[H01M]
5648288 Threshold adjustment in field effect semiconductor devicesExpiredJul 27, 94Jul 15, 97[H01L]
5404040 Structure and fabrication of power MOSFETs, including termination structuresExpiredJul 22, 93Apr 04, 95[H01L]
5328866 Low temperature oxide layer over field implant maskExpiredSep 21, 92Jul 12, 94[H01L]
5243212 Transistor with a charge induced drain extensionExpiredDec 04, 91Sep 07, 93[H01L]
5237193 Lightly doped drain MOSFET with reduced on-resistanceExpiredJun 24, 88Aug 17, 93[H01L]
5168331 Power metal-oxide-semiconductor field effect transistorExpiredJan 31, 91Dec 01, 92[H01L]
5164325 Method of making a vertical current flow field effect transistorExpiredOct 08, 87Nov 17, 92[H01L]
5156989 Complementary, isolated DMOS IC technologyExpiredNov 08, 88Oct 20, 92[H01L]
5136349 Closed cell transistor with built-in voltage clampExpiredOct 12, 90Aug 04, 92[H01L]
5132753 Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICsExpiredMar 23, 90Jul 21, 92[H01L]
5108940 MOS transistor with a charge induced drain extensionExpiredDec 15, 89Apr 28, 92[H01L]
5072266 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometryExpiredDec 27, 88Dec 10, 91[H01L]

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