SUMITOMO MITSUBISHI SILICON CORPORATION

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
C30B SINGLE-CRYSTAL GROWTH 925
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 35282
 
 
 
B24B MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING 756
 
 
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM7143
 
 
 
F27D DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE 713
 
 
 
B65D CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES 682
 
 
 
C23C COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 480
 
 
 
B01D SEPARATION 3108
 
 
 
B08B CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL 350
 
 
 
G01N INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES 3170

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
8,926,754 Epitaxial growth susceptorAug 25, 09Jan 06, 15[C23C, H01L, C30B]
8,758,505 Silicon wafer and method for manufacturing the sameMar 22, 10Jun 24, 14[C30B]
8,283,252 Method of manufacturing semiconductor waferSep 14, 09Oct 09, 12[H01L]
8,252,404 High resistivity silicon wafersNov 12, 04Aug 28, 12[C30B]
8,002,610 Double side polishing method and apparatusNov 24, 09Aug 23, 11[B24B]
7,947,572 Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulatorApr 13, 10May 24, 11[H01L]
7,837,791 Silicon single crystal wafer for particle monitorMay 23, 08Nov 23, 10[C30B]
7,824,493 Silicon wafer and method for manufacturing the sameJul 20, 05Nov 02, 10[C30B]
7,740,702 Silicon wafer and method for manufacturing the sameDec 22, 06Jun 22, 10[C30B]
7,741,193 SOI structure having a SiGe layer interposed between the silicon and the insulatorNov 10, 05Jun 22, 10[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2006/0246,723 Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry compositionABANDec 25, 03Nov 02, 06[H01L]
6,994,835 Silicon continuous casting methodExpiredDec 28, 00Feb 07, 06[C01B]
2005/0260,861 Method for evaluating semiconductor substrateABANMay 23, 05Nov 24, 05[G11B]
2005/0208,674 Method for analyzing impuritiesABANMar 16, 05Sep 22, 05[B08B]
2005/0016,896 Damper system for transportationABANMay 26, 04Jan 27, 05[B65D]
2005/0017,641 Lamp comprising a lamp body and line feed, which is guided along the exterior of the lamp body, and method for producing the lampABANAug 17, 04Jan 27, 05[H01J]
2005/0000,449 Susceptor for epitaxial growth and epitaxial growth methodABANJan 15, 04Jan 06, 05[C23C]
2004/0232,111 Method and apparatus for etching silicon wafer and method for analysis of impuritiesABANMar 11, 04Nov 25, 04[B44C]
2004/0187,769 Method of producing SOI waferABANMar 27, 03Sep 30, 04[C30B]
2004/0137,697 Method and apparatus for separating composite substrateABANJan 10, 03Jul 15, 04[H01L]
2004/0040,491 Silicon single crystal wafer for particle monitorABANJun 24, 03Mar 04, 04[C30B]
2003/0230,778 SOI structure having a SiGe Layer interposed between the silicon and the insulatorABANJan 30, 03Dec 18, 03[H01L]
2003/0140,843 Method for fabricating silicone single crystalABANNov 08, 02Jul 31, 03[C30B]
2003/0104,222 Silicon wafer and epitaxial silicon waferABANSep 18, 02Jun 05, 03[B32B]
2003/0051,658 Method and apparatus for controlling the oxygen concentration of a silicon single crystal, and method and apparatus for providing guidance for controlling the oxygen concentrationABANJul 23, 02Mar 20, 03[C30B]
2002/0142,170 Silicon single crystal, silicon wafer, and epitaxial waferABANJan 25, 02Oct 03, 02[B32B]
2002/0124,791 Silicon wafer and method for producing the sameABANMay 16, 00Sep 12, 02[C30B]
2002/0050,465 ContainerABANOct 22, 01May 02, 02[B65D]
2002/0029,738 Apparatus for pulling a single crystalABANMay 31, 01Mar 14, 02[C30B]
5,946,543 Semiconductor wafer evaluating method and semiconductor device manufacturing methodExpiredJan 16, 98Aug 31, 99[H01L]

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