TRANSLUCENT, INC.

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
 
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 65297
 
 
 
H01S DEVICES USING STIMULATED EMISSION785
 
 
 
C30B SINGLE-CRYSTAL GROWTH 551
 
 
 
B32B LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM3154
 
 
 
G01J MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY 276
 
 
 
H01J ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS 2126
 
 
 
F25B REFRIGERATION MACHINES, PLANTS, OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS 167
 
 
 
G01T MEASUREMENT OF NUCLEAR OR X-RADIATION 151
 
 
 
H02N ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR130

Top Patents (by citation)

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Recent Publications

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Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9917193 III-N semiconductor layer on Si substrateAug 30, 16Mar 13, 18[H01L]
9824886 interlayerOct 27, 14Nov 21, 17[H01L, C30B]
9496132 Nucleation of III-N on REO templatesMar 18, 13Nov 15, 16[H01L]
9460917 Method of growing III-N semiconductor layer on Si substrateFeb 12, 14Oct 04, 16[H01L]
9443939 Strain compensated REO buffer for III-N on siliconOct 27, 15Sep 13, 16[H01L]
9431526 Heterostructure with carrier concentration enhanced by single crystal REO induced strainsSep 16, 14Aug 30, 16[H01L]
9360565 Radiation detector and fabrication processMay 13, 10Jun 07, 16[G01T]
9236249 III-N material grown on REN epitaxial buffer on Si substrateJul 11, 13Jan 12, 16[H01L]
9139934 REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrateJan 23, 14Sep 22, 15[H01L, C30B]
9142406 III-N material grown on ErAlN buffer on Si substrateMay 02, 14Sep 22, 15[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
8455756 High efficiency solar cell using IIIB material transition layersExpiredFeb 19, 10Jun 04, 13[H01L]
2012/0256,232 Multilayer Rare Earth DeviceAbandonedSep 30, 11Oct 11, 12[H01L]
2012/0090,672 REO-Ge Multi-Junction Solar CellAbandonedFeb 03, 11Apr 19, 12[H01L]
2012/0085,399 REO-Ge Multi-Junction Solar CellAbandonedDec 23, 11Apr 12, 12[H01L]
2012/0073,648 Photovoltaic conversion using rare earths plus Group IV SensitizersAbandonedSep 24, 10Mar 29, 12[H01L]
2012/0012,166 Thin Film Semiconductor-on-Glass Solar Cell DevicesAbandonedSep 13, 11Jan 19, 12[H01L]
2012/0001,171 Semiconductor Structures with Rare-earthsAbandonedSep 14, 11Jan 05, 12[H01L]
2011/0037,048 Composition Comprising Rare-earth DielectricAbandonedDec 31, 09Feb 17, 11[H01L]
2010/0140,755 Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloysAbandonedDec 07, 09Jun 10, 10[H01L]
7643526 Spontaneous/stimulated light emitting μ-cavity deviceExpiredJun 21, 06Jan 05, 10[H01S]
7579623 Stacked transistors and processExpiredJul 22, 05Aug 25, 09[H01L]
2009/0183,774 Thin Film Semiconductor-on-Sapphire Solar Cell DevicesAbandonedJul 10, 08Jul 23, 09[H01L]
2009/0038,669 Thin Film Solar Cell IIIAbandonedSep 20, 07Feb 12, 09[H01L]
7476600 FET gate structure and fabrication processExpiredNov 09, 06Jan 13, 09[H01L]
2008/0286,949 Method of Forming a Rare-Earth Dielectric LayerAbandonedApr 29, 08Nov 20, 08[H01L]

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