UNITY SEMICONDUCTOR CORPORATION

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
G11C STATIC STORES 11168
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 36326
 
  
 
H03K PULSE TECHNIQUE 9122
 
  
 
G06F ELECTRIC DIGITAL DATA PROCESSING 6441
 
  
 
B82Y SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES350

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0323,681 GLOBAL BIT LINE PRE-CHARGE CIRCUIT THAT COMPENSATES FOR PROCESS, OPERATING VOLTAGE, AND TEMPERATURE VARIATIONSMay 16, 17Nov 09, 17[G11C]
2016/0379,692 CIRCUITS AND TECHNIQUES TO COMPENSATE MEMORY ACCESS SIGNALS FOR VARIATIONS OF PARAMETERS IN MULTIPLE LAYERS OF MEMORYJun 29, 16Dec 29, 16[G11C]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9870809 Circuits and techniques to compensate memory access signals for variations of parameters in multiple layers of memoryJun 29, 16Jan 16, 18[B82Y, G11C]
9870823 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variationsMay 16, 17Jan 16, 18[G11C]
9837149 Low read current architecture for memoryJun 13, 16Dec 05, 17[G11C]
9830985 Preservation circuit and methods to maintain values representing data in one or more layers of memoryDec 16, 16Nov 28, 17[G11C]
9831425 Two-terminal reversibly switchable memory deviceSep 03, 15Nov 28, 17[H01L, G06F, G11C]
9818799 Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsOct 31, 16Nov 14, 17[H01L]
9806130 Memory element with a reactive metal layerDec 29, 16Oct 31, 17[H01L, G11C]
9767897 Conductive metal oxide structures in non-volatile re-writable memory devicesMar 21, 16Sep 19, 17[H01L, G11C]
9767899 Access signal conditioning for memory cells in an arrayDec 01, 16Sep 19, 17[G11C]
9720611 Array voltage regulating technique to enable data operations on large memory arrays with resistive memory elementsJul 19, 16Aug 01, 17[G06F, G11C]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
2014/0014,893 ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICEAbandonedSep 12, 13Jan 16, 14[H01L]
8493771 Non-volatile memory device ion barrierExpiredAug 09, 12Jul 23, 13[G11C]
8456880 Multiple layers of memory implemented as different memory technologyExpiredDec 18, 09Jun 04, 13[G11C]
2013/0082,228 Memory Device Using Multiple Tunnel Oxide LayersAbandonedSep 30, 11Apr 04, 13[H01L]
2013/0082,232 Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory CellsAbandonedSep 30, 11Apr 04, 13[H01L]
2013/0043,452 Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory ElementsAbandonedAug 15, 11Feb 21, 13[H01L]
8361560 Immersion platinum plating solutionExpiredAug 16, 12Jan 29, 13[C23C, B05D, B32B]
8317910 Immersion platinum plating solutionExpiredMar 22, 10Nov 27, 12[C23C]
8320179 Dual ported non volatile FIFO with third dimension memoryExpiredNov 22, 11Nov 27, 12[G11C]
2012/0292,585 CONTINUOUS PLANE OF THIN-FILM MATERIALS FOR A TWO-TERMINAL CROSS-POINT MEMORYAbandonedAug 03, 12Nov 22, 12[H01L]
8314024 Device fabricationExpiredMay 15, 09Nov 20, 12[H01L]
2012/0262,981 DATA RETENTION STRUCTURE FOR NON-VOLATILE MEMORYAbandonedJun 25, 12Oct 18, 12[G11C]
2012/0265,929 INTEGRATED CIRCUITS TO CONTROL ACCESS TO MULTIPLE LAYERS OF MEMORY IN A SOLID STATE DRIVEAbandonedJun 22, 12Oct 18, 12[G06F]
2012/0257,438 CONTEMPORANEOUS MARGIN VERIFICATION AND MEMORY ACCESS FOR MEMORY CELLS IN CROSS POINT MEMORY ARRAYSAbandonedJun 21, 12Oct 11, 12[G11C]
2012/0257,460 METHOD FOR INDICATING A NON-FLASH NONVOLATILE MULTIPLE-TYPE THREE-DIMENSIONAL MEMORYAbandonedJun 21, 12Oct 11, 12[G11C]
2012/0217,466 Digital Potentiometer Using Third Dimensional MemoryAbandonedApr 24, 12Aug 30, 12[H01L]
2012/0211,716 Oxygen ion implanted conductive metal oxide re-writeable non-volatile memory deviceAbandonedFeb 23, 11Aug 23, 12[H01L]
2012/0210,053 Securing Non Volatile Data In RRAMAbandonedApr 24, 12Aug 16, 12[G06F]
2012/0179,862 System For Accessing Non-Volatile MemoryAbandonedMar 20, 12Jul 12, 12[G06F]
8208284 Data retention structure for non-volatile memoryExpiredMar 07, 08Jun 26, 12[G11C]

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