VISHAY-SILICONIX

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Patent Activity in the Last 10 Years

Technologies

Intl Class Technology Matters Rank in Class
 
  
 
H01L SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR 83280
 
  
 
H02H EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS 572
 
  
 
H02M APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF 399
 
  
 
G05F SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES 298
 
  
 
H01M PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY 2152
 
  
 
H03K PULSE TECHNIQUE 2129
 
  
 
H05K PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS 2154
 
  
 
B29C SHAPING OR JOINING OF PLASTICS; SHAPING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL; AFTER- TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING 1124
 
  
 
H01G CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE 165

Top Patents (by citation)

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Recent Publications

Publication # Title Filing Date Pub Date Intl Class
2017/0110,404 TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACERSep 13, 16Apr 20, 17[H01L]
2015/0372,132 SEMICONDUCTOR DEVICE WITH COMPOSITE TRENCH AND IMPLANT COLUMNSMar 16, 15Dec 24, 15[H01L]
2015/0108,568 SEMICONDUCTOR STRUCTURE WITH HIGH ENERGY DOPANT IMPLANTATIONOct 21, 13Apr 23, 15[H01L]
2011/0095,359 Field Boosted Metal-Oxide-Semiconductor Field Effect TransistorJun 25, 10Apr 28, 11[H01L]

Recent Patents

Patent # Title Filing Date Issue Date Intl Class
9893168 Split gate semiconductor device with curved gate oxide profileAug 15, 16Feb 13, 18[H01L]
9887259 Modulated super junction power MOSFET devicesMar 16, 15Feb 06, 18[H01L]
9887266 Ultra-low drain-source resistance power MOSFETFeb 11, 08Feb 06, 18[H01L]
9882044 Edge termination for super-junction MOSFETsAug 19, 15Jan 30, 18[H01L]
9853140 Adaptive charge balanced MOSFET techniquesDec 31, 12Dec 26, 17[H01L]
9842911 Adaptive charge balanced edge terminationMay 30, 12Dec 12, 17[H01L]
9831336 Process for forming a short channel trench MOSFET and device formed therebyNov 10, 14Nov 28, 17[H01L]
9793706 Current limiting systems and methodsApr 22, 13Oct 17, 17[H02H]
9787309 Methods for preventing reverse conductionSep 15, 14Oct 10, 17[H03K]
9761696 Self-aligned trench MOSFET and method of manufactureMar 20, 14Sep 12, 17[H01L]

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Expired/Abandoned/Withdrawn Patents

Patent # Title Status Filing Date Issue/Pub Date Intl Class
9496420 Molybdenum barrier metal for SiC Schottky diode and process of manufactureWithdrawnJul 31, 07Nov 15, 16[H01L]
8367500 Method of forming self aligned contacts for a power MOSFETExpiredMar 03, 03Feb 05, 13[H01L]
2012/0220,092 METHOD OF FORMING A HYBRID SPLIT GATE SIMICONDUCTORAbandonedApr 30, 12Aug 30, 12[H01L]
2012/0211,828 HYBRID SPLIT GATE SEMICONDUCTORAbandonedApr 30, 12Aug 23, 12[H01L]
2009/0278,179 CHIP SCALE SURFACE MOUNT PACKAGE FOR SEMICONDUCTOR DEVICE AND PROCESS OF FABRICATING THE SAMEAbandonedJul 20, 09Nov 12, 09[H01L]
7494876 Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the sameExpiredApr 21, 05Feb 24, 09[H01L]
7361558 Method of manufacturing a closed cell trench MOSFETExpiredJan 20, 05Apr 22, 08[H01L]
7344945 Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistorExpiredDec 22, 04Mar 18, 08[H01L]
7279743 Closed cell trench metal-oxide-semiconductor field effect transistorExpiredDec 02, 03Oct 09, 07[H01L]
6858471 Semiconductor substrate with trenches for reducing substrate resistanceExpiredSep 20, 02Feb 22, 05[H01L]

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