Kenji Hiratsuka

Inventor

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Work History

Patent OwnerApplications FiledYear
SUMITOMO ELECTRIC INDUSTRIES, LTD.
2
2
10
2
4
8
8
4
1
1
2003
2006
2008
2009
2010
2012
2013
2014
2016
2017
DAI NIPPON TORYO CO., LTD.
1
1978

Inventor Addresses

AddressDuration
Itami-shi, JPSep 28, 17 - Sep 28, 17
Kamakura, JPDec 03, 13 - Jan 28, 14
Kamakura-shi, JPJul 18, 13 - Jul 18, 13
Kasugai, JPJan 29, 80 - Jan 29, 80
Osaka, JPJul 08, 14 - Oct 17, 17
Osaka-shi, JPDec 26, 13 - Jun 15, 17
Yokohama, JPNov 16, 04 - Feb 24, 15
Yokohama-shi, JPDec 18, 03 - Mar 07, 13

Technology Profile

Technology Matters
B28B: SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG OR MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER 1
C04B: LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS 1
C30B: SINGLE-CRYSTAL GROWTH 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
97933652017Method for manufacturing silicon carbide semiconductor device having trench0
2017/0275,7792017SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE0
2017/0170,2812017METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE0
96274872017Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device0
2016/0064,4902016METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE0

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