Han-Jin Lim
Inventor
Stats
- 13 total patents issued
- 24 total patents filed
- most recent filing
This is official USPTO record data
Details
- 13 Issued Patents
- 24 Filed Patents
- 54 Total Citation Count
- Jun 27, 2011 Most Recent Filing
- Sep 9, 1999 Earliest Filing
Work History
| Patent Owner | Applications Filed | Year |
|---|---|---|
| TECHNO SEMICHEM CO., LTD. | 2 | 2006 |
| SAMSUNG ELECTRONICS CO., LTD. | 1 1 2 3 3 2 4 2 3 2 | 1999 2001 2002 2003 2004 2005 2006 2009 2010 2011 |
| L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE | 1 | 2003 |
Inventor Addresses
| Address | Duration |
|---|---|
| Seoul, KR | Sep 04, 01 - Jan 05, 12 |
Technology Profile
| Technology | # of Patents | |
|---|---|---|
| B05D: | PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL | 1 |
| C07F: | ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM, OR TELLURIUM | 1 |
| C23C: | COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL | 2 |
Patents / Publication
| Patents / Publication # | Year of Publication / Issued | Title | Citations |
|---|---|---|---|
| 2012/0001,267 | 2012 | ELECTRODE STRUCTURE, METHOD OF FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE ELECTRODE STRUCTURE | 0 |
| 8,039,344 | 2011 | Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same | 0 |
| 2011/0222,207 | 2011 | Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the same | 0 |
| 8,012,823 | 2011 | Methods of fabricating stack type capacitors of semiconductor devices | 0 |
| 2011/0124,176 | 2011 | METHODS OF FORMING A CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME | 0 |
