Tsun-Neng Yang

Inventor

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Work History

Patent OwnerApplications FiledYear
ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY
2
2
2005
2008
INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
1
2009
ATOMIC ENERGY COUNCIL - INSTITUTE OF NUCLEAR ENERGY RESEARCH
3
5
16
15
6
5
4
4
2003
2005
2006
2007
2008
2009
2010
2011
High Power-Factor AC/DC Converter with Parallel Power Processing
1
2006
Atomic Energy Council
1
1
2006
2007

Inventor Addresses

AddressDuration
Lungtan, TWJul 05, 07 - Jul 05, 07
Taipei City, TWSep 06, 07 - Jun 13, 13
Taipei, TWJul 15, 08 - May 28, 13
Taoyuan, TWMay 19, 05 - Mar 09, 10

Technology Profile

Technology # of Patents
B05D: PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL 1
C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL 5
G21K: TECHNIQUES FOR HANDLING PARTICLES OR ELECTROMAGNETIC RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA- OR X-RAY MICROSCOPES 1

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Patents / Publication

Patents / Publication #Year of Publication / IssuedTitleCitations
2013/0149,8432013In-situ Gettering Method for Removing Metal Impurities from the Surface and Interior of a Upgraded Metallurgical Grade Silicon Wafer0
8,450,2192013Method of fabricating Al2O3 thin film layer0
2013/0084,7152013Method of Fabricating Al2O3 Thin Film Layer0
2013/0071,9672013Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell0
8,273,6502012Method of fabricating thin film interface for internal light reflection and impurities isolation0

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