Method for forming and processing antiperovskite material doped with aluminum material

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United States of America Patent

PATENT NO 10008736
SERIAL NO

14060618

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Abstract

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The present invention is related to formation and processing of antiperovskite material. In various embodiments, a thin film of aluminum doped antiperovskite is deposited on a substrate, which can be an electrolyte material of a lithium-based electrochemical storage device.

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Patent Owner(s)

  • QUANTUMSCAPE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Cheng Chieh Santa Clara, US 8 156
Choi, Anna San Jose, US 1 32
Han, Joseph Redwood City, US 43 920
Holme, Tim Mountain View, US 86 1583
Hudson, Will Belmont, US 27 567
Winoto, Adrian San Francisco, US 33 1143

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