Method for producing group III element nitride crystal, group III element nitride crystal, semiconductor device, method for producing semiconductor device, and group III element nitride crystal production device

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United States of America Patent

PATENT NO 10011921
SERIAL NO

15523163

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Abstract

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To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.

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Patent Owner(s)

Patent OwnerAddress
OSAKA UNIVERSITYSUITA-SHI OSAKA 565-0871
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYFUCHU-SHI TOKYO 183-8538
ITOCHU PLASTICS INC1-12-1 DOHGENZAKA SHIBUYA-KU TOKYO 150-8525

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imade, Mamoru Osaka, JP 15 73
Isemura, Masashi Tokyo, JP 5 30
Koukitu, Akinori Tokyo, JP 38 242
Mori, Yusuke Osaka, JP 205 925
Yoshimura, Masashi Osaka, JP 93 643

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