Method for producing nitride crystal

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United States of America Patent

PATENT NO 10041186
APP PUB NO 20160355945A1
SERIAL NO

15238945

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Abstract

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It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDNAGOYA-CITY AICHI 467-8530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashihara, Shuhei Nagoya, JP 18 52
Hirao, Takayuki Nagoya, JP 45 159
Imai, Katsuhiro Nagoya, JP 89 314
Iwai, Makoto Kasugai, JP 118 504
Sakai, Masahiro Nagoya, JP 99 768
Shimodaira, Takanao Nagoya, JP 28 74

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