Composition for chemical mechanical polishing and method for reducing chemical mechanical polishing surface defects

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United States of America Patent

PATENT NO 10066127
APP PUB NO 20180016467A1
SERIAL NO

15210058

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Abstract

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The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Chi-Ming Hsinchu, TW 171 1730
Yu, An-Dih New Taipei, TW 3 1

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