Electro-optical single crystal-element, method for the preparation thereof, and systems employing the same
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United States of America Patent
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Sep 25, 2018
Grant Date -
Jan 25, 2018
app pub date -
Apr 14, 2017
filing date -
Apr 4, 2012
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Abstract
The present invention relates to an Electro-Optical (E-O) crystal elements, their applications and the processes for the preparation thereof more specifically, the present invention relates to the E-O crystal elements (which can be made from doped or un-doped PMN-PT, PIN-PMN-PT or PZN-PT ferroelectric crystals) showing super-high linear E-O coefficient γc, e.g., transverse effective linear E-O coefficient γTc, more than 1100 pm/V and longitudinal effective linear E-O coefficient γlc up to 527 pm/V, which results in a very low half-wavelength voltage Vlπ below 200V and VTπ below about 87V in a wide number of modulation, communication, laser, and industrial uses.
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