Formation of boron-doped titanium metal films with high work function

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United States of America Patent

PATENT NO 10083836
APP PUB NO 20170025280A1
SERIAL NO

14808979

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A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.

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Patent Owner(s)

  • ASM IP HOLDING B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Milligan, Robert Brennan Phoenix, US 16 7890

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