Removal composition for selectively removing hard mask and methods thereof

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United States of America Patent

PATENT NO 10155921
APP PUB NO 20160312162A1
SERIAL NO

15028501

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Abstract

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The present disclosure relates to a removal composition for selectively removing an hard mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, Ti and alloys of Ti and W relative to low-k dielectric material from a semiconductor substrate. The semiconductor substrate comprises a low-k dielectric material having a TiN, TaN, TiNxOy, TiW, W, Ti or alloy of Ti or W hard mask thereon. The removal composition comprises 0.1 wt % to 90 wt % of an oxidizing agent; 0.0001 wt % to 50 wt % of a carboxylate; and the balance up to 100 wt % of the removal composition comprising deionized water.

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Patent Owner(s)

Patent OwnerAddress
EKC TECHNOLOGY INC2520 BARRINGTON COURT HAYWARD CA 94545

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cui, Hua Castro Valley, US 31 434

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