Method of processing substrate

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United States of America Patent

PATENT NO 10224227
APP PUB NO 20180286727A1
SERIAL NO

15917131

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Abstract

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Described herein is a technique capable of improving the uniformity of device characteristics. According to the technique described herein, there is provided a method of processing a substrate, including: (a) loading a substrate having a patterned hard mask into a process chamber; (b) supplying a metal-containing gas at a first pressure into the process chamber; and (c) supplying an inert gas into the process chamber and storing the metal-containing gas at a second pressure lower than the first pressure after performing (b).

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Patent Owner(s)

  • HITACHI KOKUSAI ELECTRIC, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsui, Shun Toyama, JP 50 77
Ohashi, Naofumi Toyama, JP 134 656
Takano, Satoshi Toyama, JP 152 1868
Toyoda, Kazuyuki Toyama, JP 74 2048

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