Methods for forming fins

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10276374
APP PUB NO 20190088478A1
SERIAL NO

15709730

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Abstract

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The disclosure is directed to methods for forming a set of fins from a substrate. One embodiment of the disclosure includes: providing a stack over the substrate, the stack including a first oxide over the substrate, a first nitride over the pad oxide, a second oxide over the first nitride, and a first hardmask over the second oxide; patterning the first hard mask to form a first set of hardmask fins over the second oxide; oxidizing the first set of hardmask fins to convert the first set of hardmask fins into a set of oxide fins; using the set of oxide fins as a mask, etching the second oxide and the first nitride to expose portions of the first oxide thereunder such that remaining portions of the second oxide and the first nitride remain disposed beneath the set of oxide fins thereby defining a set of mask stacks; and using the set of mask stacks as a mask, etching the exposed portions of the first oxide and the substrate thereby forming the set of fins from the substrate.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Derderian, Garo J Saratoga Springs, US 185 9730
Liu, Jinping Ballston Lake, US 60 134
Shu, Jiehui Clifton Park, US 101 232

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