Method of forming a semiconductor device

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United States of America Patent

PATENT NO 10340335
APP PUB NO 20170186838A1
SERIAL NO

15385137

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Abstract

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A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. A filling material is formed in the trench. Dopants are introduced into a second region at a top side of the filling material. Thermal processing of the semiconductor body is carried out and is configured to intermix dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AG85579 NEUBIBERG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ploss, Reinhard Unterhaching, DE 18 65
Schulze, Hans-Joachim Taufkirchen, DE 693 4306

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