Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same

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United States of America Patent

PATENT NO 10381407
APP PUB NO 20170365640A1
SERIAL NO

15432806

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Abstract

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A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI-DO

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Beom Yong Suwon, KR 7 27
Kim, Soo Gil Seongnam, KR 30 439

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