Semiconductor apparatus

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10389351
APP PUB NO 20190103866A1
SERIAL NO

16114218

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Abstract

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Reverse recovery current flowing through a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having been turned off can become reverse recovery loss. Reverse recovery loss of the MOSFET is desirably reduced. A semiconductor apparatus including: a MOSFET portion; and a diode portion connected in anti-parallel with the MOSFET portion, wherein reverse recovery current flows through the diode portion after reverse recovery current of the MOSFET portion becomes zero is provided.

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Patent Owner(s)

  • FUJI ELECTRIC CO. LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sakai, Yasuaki Matsumoto, JP 4 6

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