Conductivity based on selective etch for GaN devices and applications thereof

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United States of America Patent

PATENT NO 10458038
APP PUB NO 20160153113A1
SERIAL NO

14929015

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Abstract

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This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

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Patent Owner(s)

Patent OwnerAddress
YALE UNIVERSITYNEW HAVEN CT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Jung Woodbridge, US 26 225
Sun, Qian Woodbridge, US 66 728
Zhang, Yu Princeton, US 707 3767

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