Porous polyurethane polishing pad and process for preparing a semiconductor device by using the same
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United States of America
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May 25, 2018
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May 25, 2018
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Abstract
The embodiments relate to a porous polyurethane polishing pad and a process for preparing a semiconductor device by using the same. The porous polyurethane polishing pad comprises a urethane-based prepolymer and a curing agent, and has a thickness of 1.5 to 2.5 mm, a number of pores whose average diameter is 10 to 60 μm, a specific gravity of 0.7 to 0.9 g/cm3, a surface hardness at 25° C. of 45 to 65 Shore D, a tensile strength of 15 to 25 N/mm2, an elongation of 80 to 250%, an AFM (atomic force microscope) elastic modulus of 30 to 100 MPa measured from a polishing surface in direct contact with an object to be polished to a predetermined depth wherein the predetermined depth is 1 to 10 μm.
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