Semiconductor device
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United States of America
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Jan 7, 2020
Grant Date -
Feb 22, 2018
app pub date -
Oct 31, 2017
filing date -
Oct 31, 2017
priority date (Note) -
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Abstract
A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
First Claim
Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- RENESAS ELECTRONICS CORPORATION
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kunishima, Hiroyuki | Ibaraki, JP | 22 | 185 |
Nakashiba, Yasutaka | Ibaraki, JP | 332 | 1900 |
Wakabayashi, Masaru | Ibaraki, JP | 21 | 94 |
Watanuki, Shinichi | Ibaraki, JP | 31 | 82 |
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