Semiconductor optical integrated device having buried hetero structure waveguide and deep ridge waveguide
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United States of America
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Jan 14, 2020
Grant Date -
Jun 20, 2019
app pub date -
Feb 8, 2019
filing date -
Feb 8, 2019
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Abstract
A semiconductor optical integrated device includes: a substrate; at least a lower cladding layer, a waveguide core layer, and an upper cladding layer sequentially layered on the substrate, a buried hetero structure waveguide portion having a waveguide structure in which a semiconductor cladding material is embedded near each of both sides of the waveguide core layer; and a ridge waveguide portion having a waveguide structure in which a semiconductor layer including at least the upper cladding layer protrudes in a mesa shape. Further, a thickness of the upper cladding layer in the buried hetero structure waveguide portion is greater than a thickness of the upper cladding layer in the ridge waveguide portion.
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