SiC-based superjunction semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10541301
APP PUB NO 20180138266A1
SERIAL NO

15854341

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Abstract

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A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions. At least one second semiconductor region adjacent to the at least one first semiconductor region and doped with dopants of a second conductivity type complementary to the first conductivity type is produced in the semiconductor body, including by applying a second implantation of second implantation ions.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jantscher, Wolfgang Villach, AT 17 50
Rupp, Roland Lauf, DE 189 1632
Schulze, Hans-Joachim Taufkirchen, DE 682 3896
Schustereder, Werner Villach, AT 64 212
Weber, Hans Bayerisch Gmain, DE 158 924

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