Diamond semiconductor system and method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10546749
APP PUB NO 20170236713A1
SERIAL NO

15406546

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Abstract

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Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of seeding the surface of a substrate material, forming a diamond layer upon the surface of the substrate material; and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the semiconductor layer has n-type donor atoms and a diamond lattice, wherein the donor atoms contribute conduction electrons with mobility greater than 770 cm2/Vs to the diamond lattice at 100 kPa and 300K, and wherein the n-type donor atoms are introduced to the lattice through ion tracks.

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Patent Owner(s)

Patent OwnerAddress
AKHAN SEMICONDUCTOR INC940 LAKESIDE DRIVE GURNEE IL 60031

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khan, Adam San Francisco, US 39 64

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