Structure and method to self align via to top and bottom of tight pitch metal interconnect layers
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United States of America
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Feb 4, 2020
Grant Date -
Sep 14, 2017
app pub date -
Dec 24, 2014
filing date -
Dec 24, 2014
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Abstract
Embodiments of the invention include interconnect structures with overhead vias and through vias that are self-aligned with interconnect lines and methods of forming such structures. In an embodiment, an interconnect structure is formed in an interlayer dielectric (ILD). One or more first interconnect lines may be formed in the ILD. The interconnect structure may also include one or more second interconnect lines in the ILD that arranged in an alternating pattern with the first interconnect lines. Top surfaces of each of the first and second interconnect lines may be recessed below a top surface of the ILD. The interconnect structure may include a self-aligned overhead via formed over one or more of the first interconnect lines or over one or more of the second interconnect lines. In an embodiment, a top surface of the self-aligned overhead via is substantially coplanar with a top surface of the ILD.
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