Methods, apparatus and system for a passthrough-based architecture

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10559503
APP PUB NO 20180033701A1
SERIAL NO

15728445

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Abstract

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At least one method, apparatus and system disclosed herein for forming a finFET device having a pass-through structure. A first gate structure and a second gate structure are formed on a semiconductor wafer. A first active area is formed on one end of the first and second gate structures. A second active area is formed on the other end of the first and second gate structures. A trench silicide (TS) structure self-aligned to the first and second gate structures is formed. The TS structure is configured to operatively couple the first active area to the second active area.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bouche, Guillaume Albany, US 185 1823
Kye, Jongwook Sunnyvale, US 94 1447
Lin, Irene Yuh-Ling Los Altos, US 3 37
Neogi, Tuhin Guha Fishkill, US 16 143
Raghunathan, Sudharshanan Mechanicville, US 15 142
Stephens, Jason Eugene Menands, US 19 149
Wei, Andy Chi-Hung Queensbury, US 4 47
Yuan, Lei Cupertino, US 107 710
Zeng, Jia Sunnyvale, US 42 178

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