Method of manufacturing semiconductor device by removing a bulk layer to expose an epitaxial-growth layer and by removing portions of a supporting-substrate to expose portions of the epitaxial-growth layer
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Feb 11, 2020
Grant Date -
Sep 28, 2017
app pub date -
Feb 28, 2017
filing date -
Feb 28, 2017
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of manufacturing a semiconductor device includes assigning a plurality of chip regions on an epitaxial-growth layer of a semiconductor substrate where the epitaxial-growth layer is grown on a bulk layer and forming a plurality of device structures on the plurality of chip regions, respectively, thinning the semiconductor substrate from a bottom-surface side of the bulk layer, bonding a supporting-substrate on a bottom surface of the thinned semiconductor substrate, selectively removing the supporting-substrate so that the bottom surface of the semiconductor substrate is exposed, at locations corresponding to positions of each of main current paths in the plurality of device structures, respectively, dicing the semiconductor substrate together with the supporting-substrate along dicing lanes between the plurality of the chip regions so as to form a plurality of chips.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully