Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices

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United States of America

PATENT NO 10566246
SERIAL NO

16104422

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Abstract

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Devices and methods are provided for fabricating shared contact trenches for source/drain layers of n-type and p-type field-effect transistor devices, wherein the shared contact trenches include dual silicide layers and dual epitaxial layers. For example, a semiconductor device includes first and second field-effect transistor devices having respective first and second source/drain layers, and a shared contact trench, wherein the first and second source/drain layers are disposed adjacent to each other within the shared contact trench, and are commonly connected to each other by the shared contact trench. The shared contact trench includes a first silicide contact layer disposed on the first source/drain layer, and a second silicide contact layer disposed on the second source/drain layer, wherein the first and second silicide contact layers comprise different silicide materials, and a metallic fill layer disposed on the first and second silicide contact layers.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Liu, Zuoguang Schenectady, US 156 1119
Wang, Junli Slingerlands, US 492 2776
Wu, Heng Guilderland, US 222 632

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