Self-forming spacers using oxidation

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10566417
APP PUB NO 20180294334A1
SERIAL NO

16005782

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Abstract

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A method of forming a self-forming spacer using oxidation. The self-forming spacer may include forming a fin field effect transistor on a substrate, the fin field effect transistor includes a gate on a fin, the gate is perpendicular to the fin; forming a gate spacer on the gate and a fin spacer on the fin, the gate spacer and the fin spacer are formed in a single step by oxidizing an exposed surface of the gate and an exposed surface of the fin; and removing the fin spacer from the fin.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINE CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Kevin K Staten Island, US 229 4005
Kobayashi, Masaharu Tokyo, JP 96 1024
Leobandung, Effendi Stormville, US 536 4756

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