Source down power FET with integrated temperature sensor

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10581426
SERIAL NO

16297963

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Abstract

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An electronic device includes a first semiconductor die with a first FET having a drain connected to a switching node, a source connected to a reference node, and a gate connected to a first switch control node. The first die also includes a diode-connected bipolar transistor that forms a temperature diode next to the first FET. The temperature diode includes a cathode connected to the reference node, and an anode connected to a bias node. The electronic device also includes a second semiconductor die with a second FET, and a package structure that encloses the first and second semiconductor dies.

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Patent Owner(s)

  • AGILENT TECHNOLOGIES TEXAS INSTRUMENTS INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baiocchi, Frank Alexander Allentown, US 4 9
Hagane, Namiko Fukushima, JP 2 4
Higashi, Masahiko Fukushima, JP 58 505
Lin, Haian Bethlehem, US 18 121

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