Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them
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United States of America
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Mar 10, 2020
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Mar 28, 2019
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Sep 28, 2017
filing date -
Sep 28, 2017
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Abstract
The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.
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