Semiconductor memory device with correcting resistances in series with memory array signal lines

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United States of America

PATENT NO 10593375
SERIAL NO

15914687

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Abstract

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According to one embodiment, a semiconductor storage device comprises a first memory cell including a first resistance change element; a first bit line and a first source line coupled to the first memory cell; and a first resistance coupled to at least one of the first bit line and the first source line.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishii, Kazuyo Kamakura Kanagawa, JP 2 2

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