Non-planar semiconductor device having hybrid geometry-based active region

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United States of America Patent

PATENT NO 10593804
APP PUB NO 20180358467A1
SERIAL NO

16108610

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Non-planar semiconductor devices having hybrid geometry-based active regions are described. For example, a semiconductor device includes a hybrid channel region including a nanowire portion disposed above an omega-FET portion disposed above a fin-FET portion. A gate stack is disposed on exposed surfaces of the hybrid channel region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. Source and drain regions are disposed on either side of the hybrid channel region.

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Patent Owner(s)

  • INTEL CORP.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ferdousi, Fahmida Hillsboro, US 3 27
Kim, Seiyon Portland, US 85 1832
Kuhn, Kelin J Aloha, US 88 2442
Rios, Rafael Austin, US 128 2842

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